Literature DB >> 25115977

A reversible conversion between a skyrmion and a domain-wall pair in a junction geometry.

Yan Zhou1, Motohiko Ezawa2.   

Abstract

Skyrmions are expected to be a key component of the next-generation of spintronics: known as 'skyrmionics'. On the other hand, there is a well-established memory device encoded by a sequence of domain walls. Here we show a conversion is possible between a skyrmion and a domain-wall pair by connecting wide and narrow nanowires, enabling the information transmission between a skyrmion device and a domain-wall device. Our results will be the basis of a hybrid device made of skyrmions and domain walls, where the encoded information in domain walls is converted into skyrmions, and then read out by converting the skyrmions back to domain walls after a functional control of the skyrmions. Such a device has the potential to outperform domain-wall racetrack memory because of the combined advantages of domain walls and skyrmions for spintronics application.

Year:  2014        PMID: 25115977     DOI: 10.1038/ncomms5652

Source DB:  PubMed          Journal:  Nat Commun        ISSN: 2041-1723            Impact factor:   14.919


  29 in total

1.  Room-temperature chiral magnetic skyrmions in ultrathin magnetic nanostructures.

Authors:  Olivier Boulle; Jan Vogel; Hongxin Yang; Stefania Pizzini; Dayane de Souza Chaves; Andrea Locatelli; Tevfik Onur Menteş; Alessandro Sala; Liliana D Buda-Prejbeanu; Olivier Klein; Mohamed Belmeguenai; Yves Roussigné; Andrey Stashkevich; Salim Mourad Chérif; Lucia Aballe; Michael Foerster; Mairbek Chshiev; Stéphane Auffret; Ioan Mihai Miron; Gilles Gaudin
Journal:  Nat Nanotechnol       Date:  2016-01-25       Impact factor: 39.213

2.  Field-free deterministic ultrafast creation of magnetic skyrmions by spin-orbit torques.

Authors:  Felix Büttner; Ivan Lemesh; Michael Schneider; Bastian Pfau; Christian M Günther; Piet Hessing; Jan Geilhufe; Lucas Caretta; Dieter Engel; Benjamin Krüger; Jens Viefhaus; Stefan Eisebitt; Geoffrey S D Beach
Journal:  Nat Nanotechnol       Date:  2017-10-02       Impact factor: 39.213

3.  Magnetic skyrmion logic gates: conversion, duplication and merging of skyrmions.

Authors:  Xichao Zhang; Motohiko Ezawa; Yan Zhou
Journal:  Sci Rep       Date:  2015-03-24       Impact factor: 4.379

4.  Uniaxial stress control of skyrmion phase.

Authors:  Y Nii; T Nakajima; A Kikkawa; Y Yamasaki; K Ohishi; J Suzuki; Y Taguchi; T Arima; Y Tokura; Y Iwasa
Journal:  Nat Commun       Date:  2015-10-13       Impact factor: 14.919

5.  Guided current-induced skyrmion motion in 1D potential well.

Authors:  I Purnama; W L Gan; D W Wong; W S Lew
Journal:  Sci Rep       Date:  2015-05-29       Impact factor: 4.379

6.  Magnetic skyrmion transistor: skyrmion motion in a voltage-gated nanotrack.

Authors:  Xichao Zhang; Yan Zhou; Motohiko Ezawa; G P Zhao; Weisheng Zhao
Journal:  Sci Rep       Date:  2015-06-18       Impact factor: 4.379

7.  Skyrmion-skyrmion and skyrmion-edge repulsions in skyrmion-based racetrack memory.

Authors:  Xichao Zhang; G P Zhao; Hans Fangohr; J Ping Liu; W X Xia; J Xia; F J Morvan
Journal:  Sci Rep       Date:  2015-01-06       Impact factor: 4.379

8.  Magnetic bilayer-skyrmions without skyrmion Hall effect.

Authors:  Xichao Zhang; Yan Zhou; Motohiko Ezawa
Journal:  Nat Commun       Date:  2016-01-19       Impact factor: 14.919

9.  Antiferromagnetic Skyrmion: Stability, Creation and Manipulation.

Authors:  Xichao Zhang; Yan Zhou; Motohiko Ezawa
Journal:  Sci Rep       Date:  2016-04-21       Impact factor: 4.379

10.  Spin-Cherenkov effect in a magnetic nanostrip with interfacial Dzyaloshinskii-Moriya interaction.

Authors:  Jing Xia; Xichao Zhang; Ming Yan; Weisheng Zhao; Yan Zhou
Journal:  Sci Rep       Date:  2016-05-04       Impact factor: 4.379

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