| Literature DB >> 25099557 |
Anoop R Damodaran1, Eric Breckenfeld, Zuhuang Chen, Sungki Lee, Lane W Martin.
Abstract
The combination of epitaxial strain and defect engineering facilitates the tuning of the transition temperature of BaTiO3 to >800 °C. Advances in thin-film deposition enable the utilization of both the electric and elastic dipoles of defects to extend the epitaxial strain to new levels, inducing unprecedented functionality and temperature stability in ferroelectrics.Keywords: BaTiO3; defects; epitaxy; ferroelectric; thin film
Year: 2014 PMID: 25099557 DOI: 10.1002/adma.201400254
Source DB: PubMed Journal: Adv Mater ISSN: 0935-9648 Impact factor: 30.849