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Literature DB >> 25070646

Interface engineering for high-performance top-gated MoS2 field-effect transistors.

Xuming Zou¹, Jingli Wang, Chung-Hua Chiu, Yun Wu, Xiangheng Xiao, Changzhong Jiang, Wen-Wei Wu, Liqiang Mai, Tangsheng Chen, Jinchai Li, Johnny C Ho, Lei Liao.

Abstract

Experimental evidence of the optimized interface engineering effects in MoS2 transistors is demonstrated. The MoS2/Y2O3/HfO2 stack offers excellent interface control. Results show that HfO2 layer can be scaled down to 9 nm, yet achieving a near-ideal sub-threshold slope (65 mv/dec) and the highest saturation current (526 μA/μm) of any MoS2 transistor reported to date.

Entities: Chemical Species

Keywords: MoS2; interface engineering; top-gated; transistors; two-dimensional materials

Year: 2014 PMID： 25070646 DOI： 10.1002/adma.201402008

Source DB: PubMed Journal: Adv Mater ISSN： 0935-9648 Impact factor: 30.849

Keyword Cloud
Cited

12 in total

1. Capping Layers to Improve the Electrical Stress Stability of MoS₂ Transistors.

Authors: James L Doherty; Steven G Noyce; Zhihui Cheng; Hattan Abuzaid; Aaron D Franklin
Journal: ACS Appl Mater Interfaces Date: 2020-07-27 Impact factor: 9.229

2. The Integration of Sub-10 nm Gate Oxide on MoS2 with Ultra Low Leakage and Enhanced Mobility.

Authors: Wen Yang; Qing-Qing Sun; Yang Geng; Lin Chen; Peng Zhou; Shi-Jin Ding; David Wei Zhang
Journal: Sci Rep Date: 2015-07-06 Impact factor: 4.379

3. Exploring atomic defects in molybdenum disulphide monolayers.

Authors: Jinhua Hong; Zhixin Hu; Matt Probert; Kun Li; Danhui Lv; Xinan Yang; Lin Gu; Nannan Mao; Qingliang Feng; Liming Xie; Jin Zhang; Dianzhong Wu; Zhiyong Zhang; Chuanhong Jin; Wei Ji; Xixiang Zhang; Jun Yuan; Ze Zhang
Journal: Nat Commun Date: 2015-02-19 Impact factor: 14.919

4. Improved Gate Dielectric Deposition and Enhanced Electrical Stability for Single-Layer MoS2 MOSFET with an AlN Interfacial Layer.

Authors: Qingkai Qian; Baikui Li; Mengyuan Hua; Zhaofu Zhang; Feifei Lan; Yongkuan Xu; Ruyue Yan; Kevin J Chen
Journal: Sci Rep Date: 2016-06-09 Impact factor: 4.379

Interface engineering for high-performance top-gated MoS2 field-effect transistors.

1. Capping Layers to Improve the Electrical Stress Stability of MoS₂ Transistors.

2. The Integration of Sub-10 nm Gate Oxide on MoS2 with Ultra Low Leakage and Enhanced Mobility.

3. Exploring atomic defects in molybdenum disulphide monolayers.

4. Improved Gate Dielectric Deposition and Enhanced Electrical Stability for Single-Layer MoS2 MOSFET with an AlN Interfacial Layer.

5. Thickness Considerations of Two-Dimensional Layered Semiconductors for Transistor Applications.

6. HfSe₂ and ZrSe₂: Two-dimensional semiconductors with native high-κ oxides.

7. Impact of Mismatch Angle on Electronic Transport Across Grain Boundaries and Interfaces in 2D Materials.

Review 8. Insulators for 2D nanoelectronics: the gap to bridge.

9. A two-dimensional semiconductor transistor with boosted gate control and sensing ability.

10. Characterizing transition-metal dichalcogenide thin-films using hyperspectral imaging and machine learning.