| Literature DB >> 25048428 |
Jin Sung Kim1, Hee Sung Lee, Pyo Jin Jeon, Young Tack Lee, Woojin Yoon, Sang-Yong Ju, Seongil Im.
Abstract
Many electron devices using two-dimensional dichalcogenide MoS2 have been reported beyond graphene, but those were mostly field-effect transistors except few while P-N or Schottky diode form devices should be also important. In the present study, we have fabricated a Pd-driven MoS2 Schottky diode and its related circuits for multifunctional applications: dynamic electrical rectifier, visible light sensor, and hydrogen gas sensor.Entities:
Keywords: Schottky barrier; diode circuits; nanosheets
Year: 2014 PMID： 25048428 DOI： 10.1002/smll.201401046
Source DB: PubMed Journal: Small ISSN： 1613-6810 Impact factor: 13.281