Literature DB >> 25000349

Crystal growth within a phase change memory cell.

Abu Sebastian1, Manuel Le Gallo1, Daniel Krebs1.   

Abstract

In spite of the prominent role played by phase change materials in information technology, a detailed understanding of the central property of such materials, namely the phase change mechanism, is still lacking mostly because of difficulties associated with experimental measurements. Here, we measure the crystal growth velocity of a phase change material at both the nanometre length and the nanosecond timescale using phase-change memory cells. The material is studied in the technologically relevant melt-quenched phase and directly in the environment in which the phase change material is going to be used in the application. We present a consistent description of the temperature dependence of the crystal growth velocity in the glass and the super-cooled liquid up to the melting temperature.

Year:  2014        PMID: 25000349     DOI: 10.1038/ncomms5314

Source DB:  PubMed          Journal:  Nat Commun        ISSN: 2041-1723            Impact factor:   14.919


  16 in total

1.  Stochastic phase-change neurons.

Authors:  Tomas Tuma; Angeliki Pantazi; Manuel Le Gallo; Abu Sebastian; Evangelos Eleftheriou
Journal:  Nat Nanotechnol       Date:  2016-05-16       Impact factor: 39.213

2.  Experimental validation of state equations and dynamic route maps for phase change memristive devices.

Authors:  Francesco Marrone; Jacopo Secco; Benedikt Kersting; Manuel Le Gallo; Fernando Corinto; Abu Sebastian; Leon O Chua
Journal:  Sci Rep       Date:  2022-04-20       Impact factor: 4.379

3.  Dual-functional Memory and Threshold Resistive Switching Based on the Push-Pull Mechanism of Oxygen Ions.

Authors:  Yi-Jen Huang; Shih-Chun Chao; Der-Hsien Lien; Cheng-Yen Wen; Jr-Hau He; Si-Chen Lee
Journal:  Sci Rep       Date:  2016-04-07       Impact factor: 4.379

4.  Redefining the Speed Limit of Phase Change Memory Revealed by Time-resolved Steep Threshold-Switching Dynamics of AgInSbTe Devices.

Authors:  Krishna Dayal Shukla; Nishant Saxena; Suresh Durai; Anbarasu Manivannan
Journal:  Sci Rep       Date:  2016-11-25       Impact factor: 4.379

5.  Temporal correlation detection using computational phase-change memory.

Authors:  Abu Sebastian; Tomas Tuma; Nikolaos Papandreou; Manuel Le Gallo; Lukas Kull; Thomas Parnell; Evangelos Eleftheriou
Journal:  Nat Commun       Date:  2017-10-24       Impact factor: 14.919

6.  Crystallization Kinetics of GeSbTe Phase-Change Nanoparticles Resolved by Ultrafast Calorimetry.

Authors:  Bin Chen; Gert H Ten Brink; George Palasantzas; Bart J Kooi
Journal:  J Phys Chem C Nanomater Interfaces       Date:  2017-04-05       Impact factor: 4.126

7.  Neuromorphic computing with multi-memristive synapses.

Authors:  Irem Boybat; Manuel Le Gallo; S R Nandakumar; Timoleon Moraitis; Thomas Parnell; Tomas Tuma; Bipin Rajendran; Yusuf Leblebici; Abu Sebastian; Evangelos Eleftheriou
Journal:  Nat Commun       Date:  2018-06-28       Impact factor: 14.919

8.  Projected phase-change memory devices.

Authors:  Wabe W Koelmans; Abu Sebastian; Vara Prasad Jonnalagadda; Daniel Krebs; Laurent Dellmann; Evangelos Eleftheriou
Journal:  Nat Commun       Date:  2015-09-03       Impact factor: 14.919

9.  Bipolar switching in chalcogenide phase change memory.

Authors:  N Ciocchini; M Laudato; M Boniardi; E Varesi; P Fantini; A L Lacaita; D Ielmini
Journal:  Sci Rep       Date:  2016-07-05       Impact factor: 4.379

10.  Graphene/h-BN Heterostructures for Vertical Architecture of RRAM Design.

Authors:  Yi-Jen Huang; Si-Chen Lee
Journal:  Sci Rep       Date:  2017-08-29       Impact factor: 4.379

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