Literature DB >> 24998299

Fate of half-metallicity near interfaces: the case of NiMnSb/MgO and NiMnSi/MgO.

Rui-Jing Zhang1, Ulrich Eckern, Udo Schwingenschlögl.   

Abstract

The electronic and magnetic properties of the interfaces between the half-metallic Heusler alloys NiMnSb, NiMnSi, and MgO have been investigated using first-principles density-functional calculations with projector augmented wave potentials generated in the generalized gradient approximation. In the case of the NiMnSb/MgO (100) interface, the half-metallicity is lost, whereas the MnSb/MgO contact in the NiMnSb/MgO (100) interface maintains a substantial degree of spin polarization at the Fermi level (∼60%). Remarkably, the NiMnSi/MgO (111) interface shows 100% spin polarization at the Fermi level, despite considerable distortions at the interface, as well as rather short Si/O bonds after full structural optimization. This behavior markedly distinguishes NiMnSi/MgO (111) from the corresponding NiMnSb/CdS and NiMnSb/InP interfaces.

Entities:  

Year:  2014        PMID: 24998299     DOI: 10.1021/am5037753

Source DB:  PubMed          Journal:  ACS Appl Mater Interfaces        ISSN: 1944-8244            Impact factor:   9.229


  1 in total

1.  Fully epitaxial C1b-type NiMnSb half-Heusler alloy films for current-perpendicular-to-plane giant magnetoresistance devices with a Ag spacer.

Authors:  Zhenchao Wen; Takahide Kubota; Tatsuya Yamamoto; Koki Takanashi
Journal:  Sci Rep       Date:  2015-12-17       Impact factor: 4.379

  1 in total

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