Literature DB >> 24977610

Trade-off between optical modulation amplitude and modulation bandwidth of silicon micro-ring modulators.

Hui Yu, Diqing Ying, Marianna Pantouvaki, Joris Van Campenhout, Philippe Absil, Yinlei Hao, Jianyi Yang, Xiaoqing Jiang.   

Abstract

An analytic model is developed to study the dynamic response of carrier-depletion silicon ring modulators. Its validity is confirmed by a detailed comparison between the modeled and the measured small signal frequency response of a practical device. The model is used to investigate how to maximize the optical modulation amplitude (OMA) and how the OMA could be traded for the bandwidth by tuning the coupling strength and the operation wavelength. Our calculation shows that for a ring modulator with equal RC time constant and photon lifetime, if its operation wavelength shifts from the position of the maximum OMA towards the direction that is away from the resonance, the 3dB modulation bandwidth increases ~2.1 times with a penalty of 3 dB to the OMA.

Year:  2014        PMID: 24977610     DOI: 10.1364/OE.22.015178

Source DB:  PubMed          Journal:  Opt Express        ISSN: 1094-4087            Impact factor:   3.894


  2 in total

1.  Integrated silicon carbide electro-optic modulator.

Authors:  Keith Powell; Liwei Li; Amirhassan Shams-Ansari; Jianfu Wang; Debin Meng; Neil Sinclair; Jiangdong Deng; Marko Lončar; Xiaoke Yi
Journal:  Nat Commun       Date:  2022-04-05       Impact factor: 17.694

2.  Optical peaking enhancement in high-speed ring modulators.

Authors:  J Müller; F Merget; S Sharif Azadeh; J Hauck; S Romero García; B Shen; J Witzens
Journal:  Sci Rep       Date:  2014-09-11       Impact factor: 4.379

  2 in total

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