Literature DB >> 24971657

Direct band gap silicon allotropes.

Qianqian Wang1, Bo Xu, Jian Sun, Hanyu Liu, Zhisheng Zhao, Dongli Yu, Changzeng Fan, Julong He.   

Abstract

Elemental silicon has a large impact on the economy of the modern world and is of fundamental importance in the technological field, particularly in solar cell industry. The great demand of society for new clean energy and the shortcomings of the current silicon solar cells are calling for new materials that can make full use of the solar power. In this paper, six metastable allotropes of silicon with direct or quasidirect band gaps of 0.39-1.25 eV are predicted by ab initio calculations at ambient pressure. Five of them possess band gaps within the optimal range for high converting efficiency from solar energy to electric power and also have better optical properties than the Si-I phase. These Si structures with different band gaps could be applied to multiple p-n junction photovoltaic modules.

Entities:  

Year:  2014        PMID: 24971657     DOI: 10.1021/ja5035792

Source DB:  PubMed          Journal:  J Am Chem Soc        ISSN: 0002-7863            Impact factor:   15.419


  8 in total

1.  A New Silicon Phase with Direct Band Gap and Novel Optoelectronic Properties.

Authors:  Yaguang Guo; Qian Wang; Yoshiyuki Kawazoe; Puru Jena
Journal:  Sci Rep       Date:  2015-09-23       Impact factor: 4.379

2.  Experimental evidence of new tetragonal polymorphs of silicon formed through ultrafast laser-induced confined microexplosion.

Authors:  L Rapp; B Haberl; C J Pickard; J E Bradby; E G Gamaly; J S Williams; A V Rode
Journal:  Nat Commun       Date:  2015-06-29       Impact factor: 14.919

3.  Si96: A New Silicon Allotrope with Interesting Physical Properties.

Authors:  Qingyang Fan; Changchun Chai; Qun Wei; Peikun Zhou; Junqin Zhang; Yintang Yang
Journal:  Materials (Basel)       Date:  2016-04-13       Impact factor: 3.623

4.  A Novel Silicon Allotrope in the Monoclinic Phase.

Authors:  Chaogang Bai; Changchun Chai; Qingyang Fan; Yuqian Liu; Yintang Yang
Journal:  Materials (Basel)       Date:  2017-04-22       Impact factor: 3.623

5.  Theoretical Investigations of Si-Ge Alloys in P4₂/ncm Phase: First-Principles Calculations.

Authors:  Zhenyang Ma; Xuhong Liu; Xinhai Yu; Chunlei Shi; Fang Yan
Journal:  Materials (Basel)       Date:  2017-05-31       Impact factor: 3.623

6.  A Reinvestigation of a Superhard Tetragonal sp³ Carbon Allotrope.

Authors:  Mengjiang Xing; Binhua Li; Zhengtao Yu; Qi Chen
Journal:  Materials (Basel)       Date:  2016-06-17       Impact factor: 3.623

7.  Dramatic Changes in Thermoelectric Power of Germanium under Pressure: Printing n-p Junctions by Applied Stress.

Authors:  Igor V Korobeinikov; Natalia V Morozova; Vladimir V Shchennikov; Sergey V Ovsyannikov
Journal:  Sci Rep       Date:  2017-03-14       Impact factor: 4.379

8.  Dipole-allowed direct band gap silicon superlattices.

Authors:  Young Jun Oh; In-Ho Lee; Sunghyun Kim; Jooyoung Lee; Kee Joo Chang
Journal:  Sci Rep       Date:  2015-12-11       Impact factor: 4.379

  8 in total

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