Literature DB >> 24953477

Electrochemical dynamics of nanoscale metallic inclusions in dielectrics.

Yuchao Yang1, Peng Gao2, Linze Li3, Xiaoqing Pan3, Stefan Tappertzhofen4, ShinHyun Choi1, Rainer Waser5, Ilia Valov5, Wei D Lu1.   

Abstract

Nanoscale metal inclusions in or on solid-state dielectrics are an integral part of modern electrocatalysis, optoelectronics, capacitors, metamaterials and memory devices. The properties of these composite systems strongly depend on the size, dispersion of the inclusions and their chemical stability, and are usually considered constant. Here we demonstrate that nanoscale inclusions (for example, clusters) in dielectrics dynamically change their shape, size and position upon applied electric field. Through systematic in situ transmission electron microscopy studies, we show that fundamental electrochemical processes can lead to universally observed nucleation and growth of metal clusters, even for inert metals like platinum. The clusters exhibit diverse dynamic behaviours governed by kinetic factors including ion mobility and redox rates, leading to different filament growth modes and structures in memristive devices. These findings reveal the microscopic origin behind resistive switching, and also provide general guidance for the design of novel devices involving electronics and ionics.

Entities:  

Year:  2014        PMID: 24953477     DOI: 10.1038/ncomms5232

Source DB:  PubMed          Journal:  Nat Commun        ISSN: 2041-1723            Impact factor:   14.919


  40 in total

1.  Nanoscale memristive radiofrequency switches.

Authors:  Shuang Pi; Mohammad Ghadiri-Sadrabadi; Joseph C Bardin; Qiangfei Xia
Journal:  Nat Commun       Date:  2015-06-25       Impact factor: 14.919

2.  Memristors with diffusive dynamics as synaptic emulators for neuromorphic computing.

Authors:  Zhongrui Wang; Saumil Joshi; Sergey E Savel'ev; Hao Jiang; Rivu Midya; Peng Lin; Miao Hu; Ning Ge; John Paul Strachan; Zhiyong Li; Qing Wu; Mark Barnell; Geng-Lin Li; Huolin L Xin; R Stanley Williams; Qiangfei Xia; J Joshua Yang
Journal:  Nat Mater       Date:  2016-09-26       Impact factor: 43.841

3.  Silver Nanofilament Formation Dynamics in a Polymer-Ionic Liquid Thin Film by Direct-Write.

Authors:  Zhongmou Chao; Kutay B Sezginel; Ke Xu; Garrison M Crouch; Abigale E Gray; Christopher E Wilmer; Paul W Bohn; David B Go; Susan K Fullerton-Shirey
Journal:  Adv Funct Mater       Date:  2019-11-28       Impact factor: 18.808

4.  Cluster-type analogue memristor by engineering redox dynamics for high-performance neuromorphic computing.

Authors:  Jaehyun Kang; Taeyoon Kim; Suman Hu; Jaewook Kim; Joon Young Kwak; Jongkil Park; Jong Keuk Park; Inho Kim; Suyoun Lee; Sangbum Kim; YeonJoo Jeong
Journal:  Nat Commun       Date:  2022-07-12       Impact factor: 17.694

5.  A calibratable sensory neuron based on epitaxial VO2 for spike-based neuromorphic multisensory system.

Authors:  Rui Yuan; Qingxi Duan; Pek Jun Tiw; Ge Li; Zhuojian Xiao; Zhaokun Jing; Ke Yang; Chang Liu; Chen Ge; Ru Huang; Yuchao Yang
Journal:  Nat Commun       Date:  2022-07-08       Impact factor: 17.694

6.  Nanoscale cation motion in TaO(x), HfO(x) and TiO(x) memristive systems.

Authors:  Anja Wedig; Michael Luebben; Deok-Yong Cho; Marco Moors; Katharina Skaja; Vikas Rana; Tsuyoshi Hasegawa; Kiran K Adepalli; Bilge Yildiz; Rainer Waser; Ilia Valov
Journal:  Nat Nanotechnol       Date:  2015-09-28       Impact factor: 39.213

7.  Atomic View of Filament Growth in Electrochemical Memristive Elements.

Authors:  Hangbing Lv; Xiaoxin Xu; Pengxiao Sun; Hongtao Liu; Qing Luo; Qi Liu; Writam Banerjee; Haitao Sun; Shibing Long; Ling Li; Ming Liu
Journal:  Sci Rep       Date:  2015-08-21       Impact factor: 4.379

8.  Low-energy Resistive Random Access Memory Devices with No Need for a Compliance Current.

Authors:  Zedong Xu; Lina Yu; Yong Wu; Chang Dong; Ning Deng; Xiaoguang Xu; J Miao; Yong Jiang
Journal:  Sci Rep       Date:  2015-05-18       Impact factor: 4.379

Review 9.  On the Thermal Models for Resistive Random Access Memory Circuit Simulation.

Authors:  Juan B Roldán; Gerardo González-Cordero; Rodrigo Picos; Enrique Miranda; Félix Palumbo; Francisco Jiménez-Molinos; Enrique Moreno; David Maldonado; Santiago B Baldomá; Mohamad Moner Al Chawa; Carol de Benito; Stavros G Stavrinides; Jordi Suñé; Leon O Chua
Journal:  Nanomaterials (Basel)       Date:  2021-05-11       Impact factor: 5.076

10.  Switching operation and degradation of resistive random access memory composed of tungsten oxide and copper investigated using in-situ TEM.

Authors:  Masashi Arita; Akihito Takahashi; Yuuki Ohno; Akitoshi Nakane; Atsushi Tsurumaki-Fukuchi; Yasuo Takahashi
Journal:  Sci Rep       Date:  2015-11-27       Impact factor: 4.379

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