| Literature DB >> 24921833 |
Yi Zhang, Shuyu Yang, Yisu Yang, Michael Gould, Noam Ophir, Andy Eu-Jin Lim, Guo-Qiang Lo, Peter Magill, Keren Bergman, Tom Baehr-Jones, Michael Hochberg.
Abstract
We report a Ge-on-Si photodetector without doped Ge or Ge-metal contacts. Despite the simplified fabrication process, the device shows a responsivity of 1.14 A/W at -4 V reverse bias and 1.44 A/W at -12V, at 1550 nm wavelength. Dark current is less than 1µA under both bias conditions. We also demonstrate open eye diagrams at 40Gb/s.Entities:
Year: 2014 PMID： 24921833 DOI： 10.1364/OE.22.011367
Source DB: PubMed Journal: Opt Express ISSN： 1094-4087 Impact factor: 3.894