| Literature DB >> 24899533 |
Khalid Muhieddine1, Mujeeb Ullah, Bhola N Pal, Paul Burn, Ebinazar B Namdas.
Abstract
All solution-processed, high performance hybrid light emitting transistors (HLETs) are realized. Using a novel combination of device architecture and materials a bilayer device comprised of an inorganic and organic semiconducting layer is fabricated and the optoelectronic properties are presented.Keywords: hybrid electronics; light emitting transistors; metal oxides; polymers; solution processed
Year: 2014 PMID: 24899533 DOI: 10.1002/adma.201400938
Source DB: PubMed Journal: Adv Mater ISSN: 0935-9648 Impact factor: 30.849