| Literature DB >> 24856712 |
Chenhui Yan1, Junwei Liu2, Yunyi Zang2, Jianfeng Wang2, Zhenyu Wang2, Peng Wang2, Zhi-Dong Zhang3, Lili Wang2, Xucun Ma2, Shuaihua Ji2, Ke He2, Liang Fu4, Wenhui Duan2, Qi-Kun Xue2, Xi Chen2.
Abstract
The surface of a topological crystalline insulator (TCI) carries an even number of Dirac cones protected by crystalline symmetry. We epitaxially grew high-quality Pb(1-x)Sn(x)Te(111) films and investigated the TCI phase by in situ angle-resolved photoemission spectroscopy. Pb(1-x)Sn(x)Te(111) films undergo a topological phase transition from a trivial insulator to TCI via increasing the Sn/Pb ratio, accompanied by a crossover from n-type to p-type doping. In addition, a hybridization gap is opened in the surface states when the thickness of the film is reduced to the two-dimensional limit. The work demonstrates an approach to manipulating the topological properties of TCI, which is of importance for future fundamental research and applications based on TCI.Entities:
Year: 2014 PMID: 24856712 DOI: 10.1103/PhysRevLett.112.186801
Source DB: PubMed Journal: Phys Rev Lett ISSN: 0031-9007 Impact factor: 9.161