Literature DB >> 24848806

Quantum Hall effect and quantum point contact in bilayer-patched epitaxial graphene.

Cassandra Chua1, Malcolm Connolly, Arseniy Lartsev, Tom Yager, Samuel Lara-Avila, Sergey Kubatkin, Sergey Kopylov, Vladimir Fal'ko, Rositza Yakimova, Ruth Pearce, T J B M Janssen, Alexander Tzalenchuk, Charles G Smith.   

Abstract

We study an epitaxial graphene monolayer with bilayer inclusions via magnetotransport measurements and scanning gate microscopy at low temperatures. We find that bilayer inclusions can be metallic or insulating depending on the initial and gated carrier density. The metallic bilayers act as equipotential shorts for edge currents, while closely spaced insulating bilayers guide the flow of electrons in the monolayer constriction, which was locally gated using a scanning gate probe.

Entities:  

Year:  2014        PMID: 24848806     DOI: 10.1021/nl5008757

Source DB:  PubMed          Journal:  Nano Lett        ISSN: 1530-6984            Impact factor:   11.189


  3 in total

1.  Insulator-quantum Hall transitionin monolayer epitaxial graphene.

Authors:  Lung-I Huang; Yanfei Yang; Randolph E Elmquist; Shun-Tsung Lo; Fan-Hung Liu; Chi-Te Liang
Journal:  RSC Adv       Date:  2016-07-22       Impact factor: 3.361

2.  Quantum Hall resistance standards from graphene grown by chemical vapour deposition on silicon carbide.

Authors:  F Lafont; R Ribeiro-Palau; D Kazazis; A Michon; O Couturaud; C Consejo; T Chassagne; M Zielinski; M Portail; B Jouault; F Schopfer; W Poirier
Journal:  Nat Commun       Date:  2015-04-20       Impact factor: 14.919

3.  Fundamental Scaling Laws in Nanophotonics.

Authors:  Ke Liu; Shuai Sun; Arka Majumdar; Volker J Sorger
Journal:  Sci Rep       Date:  2016-11-21       Impact factor: 4.379

  3 in total

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