Enhanced photocurrent and dynamic response in vertically aligned In₂S₃/Ag core/shell nanorod array photoconductive devices.

Enhanced photocurrent values were achieved through a semiconductor-core/metal-shell nanorod array photoconductive device geometry. Vertically aligned indium sulfide (In2S3) nanorods were formed as the core by using glancing angle deposition technique (GLAD). A thin silver (Ag) layer is conformally coated around nanorods as the metallic shell through a high pressure sputter deposition method. This was followed by capping the nanorods with a metallic blanket layer of Ag film by utilizing a new small angle deposition technique combined with GLAD. Radial interface that was formed by the core/shell geometry provided an efficient charge carrier collection by shortening carrier transit times, which led to a superior photocurrent and gain. Thin metal shells around nanorods acted as a passivation layer to decrease surface states that cause prolonged carrier lifetimes and slow recovery of the photocurrent in nanorods. A combination of efficient carrier collection with surface passivation resulted in enhanced photocurrent and dynamic response at the same time in one device structure. In2S3 nanorod devices without the metal shell and with relatively thicker metal shell were also fabricated and characterized for comparison. In2S3 nanorods with thin metal shell showed the highest photosensitivity (photocurrent/dark current) response compared to two other designs. Microstructural, morphological, and electronic properties of the core/shell nanorods were used to explain the results observed.