| Literature DB >> 24813694 |
Guoqiang Yu1, Pramey Upadhyaya1, Yabin Fan2, Juan G Alzate2, Wanjun Jiang2, Kin L Wong2, So Takei3, Scott A Bender3, Li-Te Chang2, Ying Jiang4, Murong Lang2, Jianshi Tang2, Yong Wang4, Yaroslav Tserkovnyak3, Pedram Khalili Amiri2, Kang L Wang2.
Abstract
Magnetization switching by current-induced spin-orbit torques is of great interest due to its potential applications in ultralow-power memory and logic devices. The switching of ferromagnets with perpendicular magnetization is of particular technological relevance. However, in such materials, the presence of an in-plane external magnetic field is typically required to assist spin-orbit torque-driven switching and this is an obstacle for practical applications. Here, we report the switching of out-of-plane magnetized Ta/Co(20)Fe(60)B(20)/TaO(x) structures by spin-orbit torques driven by in-plane currents, without the need for any external magnetic fields. This is achieved by introducing a lateral structural asymmetry into our devices, which gives rise to a new field-like spin-orbit torque when in-plane current flows in these structures. The direction of the current-induced effective field corresponding to this field-like spin-orbit torque is out-of-plane, facilitating the switching of perpendicular magnets.Year: 2014 PMID: 24813694 DOI: 10.1038/nnano.2014.94
Source DB: PubMed Journal: Nat Nanotechnol ISSN: 1748-3387 Impact factor: 39.213