Literature DB >> 24810315

Surface reconstruction-induced coincidence lattice formation between two-dimensionally bonded materials and a three-dimensionally bonded substrate.

Jos E Boschker1, Jamo Momand, Valeria Bragaglia, Ruining Wang, Karthick Perumal, Alessandro Giussani, Bart J Kooi, Henning Riechert, Raffaella Calarco.   

Abstract

Sb2Te3 films are used for studying the epitaxial registry between two-dimensionally bonded (2D) materials and three-dimensional bonded (3D) substrates. In contrast to the growth of 3D materials, it is found that the formation of coincidence lattices between Sb2Te3 and Si(111) depends on the geometry and dangling bonds of the reconstructed substrate surface. Furthermore, we show that the epitaxial registry can be influenced by controlling the Si(111) surface reconstruction and confirm the results for ultrathin films.

Entities:  

Year:  2014        PMID: 24810315     DOI: 10.1021/nl5011492

Source DB:  PubMed          Journal:  Nano Lett        ISSN: 1530-6984            Impact factor:   11.189


  8 in total

1.  Sub-nanometre resolution of atomic motion during electronic excitation in phase-change materials.

Authors:  Kirill V Mitrofanov; Paul Fons; Kotaro Makino; Ryo Terashima; Toru Shimada; Alexander V Kolobov; Junji Tominaga; Valeria Bragaglia; Alessandro Giussani; Raffaella Calarco; Henning Riechert; Takahiro Sato; Tetsuo Katayama; Kanade Ogawa; Tadashi Togashi; Makina Yabashi; Simon Wall; Dale Brewe; Muneaki Hase
Journal:  Sci Rep       Date:  2016-02-12       Impact factor: 4.379

2.  Revisiting the Local Structure in Ge-Sb-Te based Chalcogenide Superlattices.

Authors:  Barbara Casarin; Antonio Caretta; Jamo Momand; Bart J Kooi; Marcel A Verheijen; Valeria Bragaglia; Raffaella Calarco; Marina Chukalina; Xiaoming Yu; John Robertson; Felix R L Lange; Matthias Wuttig; Andrea Redaelli; Enrico Varesi; Fulvio Parmigiani; Marco Malvestuto
Journal:  Sci Rep       Date:  2016-03-01       Impact factor: 4.379

3.  Modulation of van der Waals and classical epitaxy induced by strain at the Si step edges in GeSbTe alloys.

Authors:  Eugenio Zallo; Stefano Cecchi; Jos E Boschker; Antonio M Mio; Fabrizio Arciprete; Stefania Privitera; Raffaella Calarco
Journal:  Sci Rep       Date:  2017-05-03       Impact factor: 4.379

4.  Electrical and optical properties of epitaxial binary and ternary GeTe-Sb2Te3 alloys.

Authors:  Jos E Boschker; Xiang Lü; Valeria Bragaglia; Ruining Wang; Holger T Grahn; Raffaella Calarco
Journal:  Sci Rep       Date:  2018-04-12       Impact factor: 4.379

Review 5.  Phase change thin films for non-volatile memory applications.

Authors:  A Lotnyk; M Behrens; B Rauschenbach
Journal:  Nanoscale Adv       Date:  2019-09-18

6.  Metal-Insulator Transition Driven by Vacancy Ordering in GeSbTe Phase Change Materials.

Authors:  Valeria Bragaglia; Fabrizio Arciprete; Wei Zhang; Antonio Massimiliano Mio; Eugenio Zallo; Karthick Perumal; Alessandro Giussani; Stefano Cecchi; Jos Emiel Boschker; Henning Riechert; Stefania Privitera; Emanuele Rimini; Riccardo Mazzarello; Raffaella Calarco
Journal:  Sci Rep       Date:  2016-04-01       Impact factor: 4.379

7.  Coincident-site lattice matching during van der Waals epitaxy.

Authors:  Jos E Boschker; Lauren A Galves; Timur Flissikowski; Joao Marcelo J Lopes; Henning Riechert; Raffaella Calarco
Journal:  Sci Rep       Date:  2015-12-14       Impact factor: 4.379

8.  Far-Infrared and Raman Spectroscopy Investigation of Phonon Modes in Amorphous and Crystalline Epitaxial GeTe-Sb2Te3 Alloys.

Authors:  V Bragaglia; K Holldack; J E Boschker; F Arciprete; E Zallo; T Flissikowski; R Calarco
Journal:  Sci Rep       Date:  2016-06-24       Impact factor: 4.379

  8 in total

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