| Literature DB >> 24808842 |
Marcelo S Brogliato1, Daniel M Chada2, Alexandre Linhares1.
Abstract
How can experts, sometimes in exacting detail, almost immediately and very precisely recall memory items from a vast repertoire? The problem in which we will be interested concerns models of theoretical neuroscience that could explain the speed and robustness of an expert's recollection. The approach is based on Sparse Distributed Memory, which has been shown to be plausible, both in a neuroscientific and in a psychological manner, in a number of ways. A crucial characteristic concerns the limits of human recollection, the "tip-of-tongue" memory event-which is found at a non-linearity in the model. We expand the theoretical framework, deriving an optimization formula to solve this non-linearity. Numerical results demonstrate how the higher frequency of rehearsal, through work or study, immediately increases the robustness and speed associated with expert memory.Entities:
Keywords: critical distance; expert memory; non-linearity; sparse distributed memory; theoretical neuroscience
Year: 2014 PMID: 24808842 PMCID: PMC4009432 DOI: 10.3389/fnhum.2014.00222
Source DB: PubMed Journal: Front Hum Neurosci ISSN: 1662-5161 Impact factor: 3.169
Figure 1Cell assemblies: the information encoded in a single neuron is negligible and fragile. Multiple neurons may provide the best description of human information processing.
Figure 2Hard-locations randomly sampled from binary space.
Figure 3Activated addresses inside access radius .
Write operation example in a 7-dimensional memory of data η being written to ξ, one of the activated addresses.
Figure 4Hard-locations pointing, approximately, to the target bitstring.
Read operation example.
Figure 5Shared addresses between the target datum η and the cue η.
Figure 6In this example, four iterative readings are required to converge from η.
Figure 7Influence of number of iterative-readings in a 1000-dimen- sional SDM memory.
Figure 8Influence of number of target writes in a 1000-dimensional SDM memory.