| Literature DB >> 24784683 |
Shaoqing Jin1, Fengtao Fan1, Meiling Guo1, Ying Zhang1, Zhaochi Feng1, Can Li1.
Abstract
Deep UV Raman spectrograph with the laser excitation line down to 177.3 nm was developed in this laboratory. An ellipsoidal mirror and a dispersed-subtractive triple monochromator were used to collect and disperse Raman light, respectively. The triple monochromator was arranged in a triangular configuration with only six mirrors used. 177.3 nm laser excited Raman spectrum with cut-off wavenumber down to 200 cm(-1) and spectral resolution of 8.0 cm(-1) can be obtained under the condition of high purity N2 purging. With the C-C σ bond in Teflon selectively excited by the 177.3 nm laser, resonance Raman spectrum of Teflon with good quality was recorded on the home-built instrument and the σ-σ(*) transition of C-C bond was studied. The result demonstrates that deep UV Raman spectrograph is powerful for studying the systems with electronic transition located in the deep UV region.Entities:
Mesh:
Substances:
Year: 2014 PMID: 24784683 DOI: 10.1063/1.4870444
Source DB: PubMed Journal: Rev Sci Instrum ISSN: 0034-6748 Impact factor: 1.523