Literature DB >> 24781276

Tuning the surface Fermi level on p-type gallium nitride nanowires for efficient overall water splitting.

M G Kibria1, S Zhao1, F A Chowdhury1, Q Wang1, H P T Nguyen1, M L Trudeau2, H Guo3, Z Mi1.   

Abstract

Solar water splitting is one of the key steps in artificial photosynthesis for future carbon-neutral, storable and sustainable source of energy. Here we show that one of the major obstacles for achieving efficient and stable overall water splitting over the emerging nanostructured photocatalyst is directly related to the uncontrolled surface charge properties. By tuning the Fermi level on the nonpolar surfaces of gallium nitride nanowire arrays, we demonstrate that the quantum efficiency can be enhanced by more than two orders of magnitude. The internal quantum efficiency and activity on p-type gallium nitride nanowires can reach ~51% and ~4.0 mol hydrogen h(-1) g(-1), respectively. The nanowires remain virtually unchanged after over 50,000 μmol gas (hydrogen and oxygen) is produced, which is more than 10,000 times the amount of photocatalyst itself (~4.6 μmol). The essential role of Fermi-level tuning in balancing redox reactions and in enhancing the efficiency and stability is also elucidated.

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Year:  2014        PMID: 24781276     DOI: 10.1038/ncomms4825

Source DB:  PubMed          Journal:  Nat Commun        ISSN: 2041-1723            Impact factor:   14.919


  16 in total

1.  Visible light-driven efficient overall water splitting using p-type metal-nitride nanowire arrays.

Authors:  M G Kibria; F A Chowdhury; S Zhao; B AlOtaibi; M L Trudeau; H Guo; Z Mi
Journal:  Nat Commun       Date:  2015-04-09       Impact factor: 14.919

2.  Aluminum nitride nanowire light emitting diodes: Breaking the fundamental bottleneck of deep ultraviolet light sources.

Authors:  S Zhao; A T Connie; M H T Dastjerdi; X H Kong; Q Wang; M Djavid; S Sadaf; X D Liu; I Shih; H Guo; Z Mi
Journal:  Sci Rep       Date:  2015-02-16       Impact factor: 4.379

3.  Electronic and chemical structure of the H2O/GaN(0001) interface under ambient conditions.

Authors:  Xueqiang Zhang; Sylwia Ptasinska
Journal:  Sci Rep       Date:  2016-04-25       Impact factor: 4.379

4.  Hydrogen Generation using non-polar coaxial InGaN/GaN Multiple Quantum Well Structure Formed on Hollow n-GaN Nanowires.

Authors:  Ji-Hyeon Park; Arjun Mandal; San Kang; Uddipta Chatterjee; Jin Soo Kim; Byung-Guon Park; Moon-Deock Kim; Kwang-Un Jeong; Cheul-Ro Lee
Journal:  Sci Rep       Date:  2016-08-24       Impact factor: 4.379

5.  Thermal and Electrical Conduction of Single-crystal Bi2Te3 Nanostructures grown using a one step process.

Authors:  Dambi Park; Sungjin Park; Kwangsik Jeong; Hong-Sik Jeong; Jea Yong Song; Mann-Ho Cho
Journal:  Sci Rep       Date:  2016-01-11       Impact factor: 4.379

6.  Morphology Controlled Fabrication of InN Nanowires on Brass Substrates.

Authors:  Huijie Li; Guijuan Zhao; Lianshan Wang; Zhen Chen; Shaoyan Yang
Journal:  Nanomaterials (Basel)       Date:  2016-10-29       Impact factor: 5.076

7.  A photochemical diode artificial photosynthesis system for unassisted high efficiency overall pure water splitting.

Authors:  Faqrul A Chowdhury; Michel L Trudeau; Hong Guo; Zetian Mi
Journal:  Nat Commun       Date:  2018-04-27       Impact factor: 14.919

8.  Tilt-structure and high-performance of hierarchical Bi1.5Sb0.5Te3 nanopillar arrays.

Authors:  Ming Tan; Yanming Hao; Yuan Deng; Dali Yan; Zehua Wu
Journal:  Sci Rep       Date:  2018-04-23       Impact factor: 4.379

9.  Growth of Well-Aligned InN Nanorods on Amorphous Glass Substrates.

Authors:  Huijie Li; Guijuan Zhao; Hongyuan Wei; Lianshan Wang; Zhen Chen; Shaoyan Yang
Journal:  Nanoscale Res Lett       Date:  2016-05-26       Impact factor: 4.703

10.  Barrier inhomogeneities limited current and 1/f noise transport in GaN based nanoscale Schottky barrier diodes.

Authors:  Ashutosh Kumar; M Heilmann; Michael Latzel; Raman Kapoor; Intu Sharma; M Göbelt; Silke H Christiansen; Vikram Kumar; Rajendra Singh
Journal:  Sci Rep       Date:  2016-06-10       Impact factor: 4.379

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