Literature DB >> 24769626

Multi-level control of conductive nano-filament evolution in HfO2 ReRAM by pulse-train operations.

L Zhao1, H-Y Chen, S-C Wu, Z Jiang, S Yu, T-H Hou, H-S Philip Wong, Y Nishi.   

Abstract

Precise electrical manipulation of nanoscale defects such as vacancy nano-filaments is highly desired for the multi-level control of ReRAM. In this paper we present a systematic investigation on the pulse-train operation scheme for reliable multi-level control of conductive filament evolution. By applying the pulse-train scheme to a 3 bit per cell HfO2 ReRAM, the relative standard deviations of resistance levels are improved up to 80% compared to the single-pulse scheme. The observed exponential relationship between the saturated resistance and the pulse amplitude provides evidence for the gap-formation model of the filament-rupture process.

Entities:  

Year:  2014        PMID： 24769626     DOI： 10.1039/c4nr00500g

Source DB:  PubMed          Journal:  Nanoscale        ISSN： 2040-3364            Impact factor:   7.790


  16 in total

1.  Associative memory realized by a reconfigurable memristive Hopfield neural network.

Authors:  S G Hu; Y Liu; Z Liu; T P Chen; J J Wang; Q Yu; L J Deng; Y Yin; Sumio Hosaka
Journal:  Nat Commun       Date:  2015-06-25       Impact factor: 14.919

2.  Spatially resolved TiOx phases in switched RRAM devices using soft X-ray spectromicroscopy.

Authors:  D Carta; A P Hitchcock; P Guttmann; A Regoutz; A Khiat; A Serb; I Gupta; T Prodromakis
Journal:  Sci Rep       Date:  2016-02-19       Impact factor: 4.379

3.  Analog Memristive Synapse in Spiking Networks Implementing Unsupervised Learning.

Authors:  Erika Covi; Stefano Brivio; Alexander Serb; Themis Prodromakis; Marco Fanciulli; Sabina Spiga
Journal:  Front Neurosci       Date:  2016-10-25       Impact factor: 4.677

4.  Multistate Memristive Tantalum Oxide Devices for Ternary Arithmetic.

Authors:  Wonjoo Kim; Anupam Chattopadhyay; Anne Siemon; Eike Linn; Rainer Waser; Vikas Rana
Journal:  Sci Rep       Date:  2016-11-11       Impact factor: 4.379

5.  Multibit memory operation of metal-oxide bi-layer memristors.

Authors:  Spyros Stathopoulos; Ali Khiat; Maria Trapatseli; Simone Cortese; Alexantrou Serb; Ilia Valov; Themis Prodromakis
Journal:  Sci Rep       Date:  2017-12-13       Impact factor: 4.379

6.  Compliance-Free ZrO2/ZrO2 - x /ZrO2 Resistive Memory with Controllable Interfacial Multistate Switching Behaviour.

Authors:  Ruomeng Huang; Xingzhao Yan; Sheng Ye; Reza Kashtiban; Richard Beanland; Katrina A Morgan; Martin D B Charlton; C H Kees de Groot
Journal:  Nanoscale Res Lett       Date:  2017-06-02       Impact factor: 4.703

7.  Perovskite neural trees.

Authors:  Hai-Tian Zhang; Tae Joon Park; Ivan A Zaluzhnyy; Qi Wang; Shakti Nagnath Wadekar; Sukriti Manna; Robert Andrawis; Peter O Sprau; Yifei Sun; Zhen Zhang; Chengzi Huang; Hua Zhou; Zhan Zhang; Badri Narayanan; Gopalakrishnan Srinivasan; Nelson Hua; Evgeny Nazaretski; Xiaojing Huang; Hanfei Yan; Mingyuan Ge; Yong S Chu; Mathew J Cherukara; Martin V Holt; Muthu Krishnamurthy; Oleg G Shpyrko; Subramanian K R S Sankaranarayanan; Alex Frano; Kaushik Roy; Shriram Ramanathan
Journal:  Nat Commun       Date:  2020-05-07       Impact factor: 14.919

Review 8.  Resistive Random Access Memory (RRAM): an Overview of Materials, Switching Mechanism, Performance, Multilevel Cell (mlc) Storage, Modeling, and Applications.

Authors:  Furqan Zahoor; Tun Zainal Azni Zulkifli; Farooq Ahmad Khanday
Journal:  Nanoscale Res Lett       Date:  2020-04-22       Impact factor: 4.703

9.  Resistance switching mode transformation in SrRuO3/Cr-doped SrZrO3/Pt frameworks via a thermally activated Ti out-diffusion process.

Authors:  Yongcheol Jo; Kyooho Jung; Jongmin Kim; Hyeonseok Woo; Jaeseok Han; Hyungsang Kim; Jinpyo Hong; Jeon-Kook Lee; Hyunsik Im
Journal:  Sci Rep       Date:  2014-12-08       Impact factor: 4.379

10.  Crossbar Nanoscale HfO2-Based Electronic Synapses.

Authors:  Yury Matveyev; Roman Kirtaev; Alena Fetisova; Sergey Zakharchenko; Dmitry Negrov; Andrey Zenkevich
Journal:  Nanoscale Res Lett       Date:  2016-03-15       Impact factor: 4.703
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