Literature DB >> 24765998

Finite-temperature conductivity and magnetoconductivity of topological insulators.

Hai-Zhou Lu1, Shun-Qing Shen1.   

Abstract

The electronic transport experiments on topological insulators exhibit a dilemma. A negative cusp in magnetoconductivity is widely believed as a quantum transport signature of the topological surface states, which are immune from localization and exhibit the weak antilocalization. However, the measured conductivity drops logarithmically when lowering temperature, showing a typical feature of the weak localization as in ordinary disordered metals. Here, we present a conductivity formula for massless and massive Dirac fermions as a function of magnetic field and temperature, by taking into account the electron-electron interaction and quantum interference simultaneously. The formula reconciles the dilemma by explicitly clarifying that the temperature dependence of the conductivity is dominated by the interaction, while the magnetoconductivity is mainly contributed by the quantum interference. The theory paves the road to quantitatively study the transport in topological insulators, and can be extended to other two-dimensional Dirac-like systems, such as graphene, transition metal dichalcogenides, and silicene.

Entities:  

Year:  2014        PMID: 24765998     DOI: 10.1103/PhysRevLett.112.146601

Source DB:  PubMed          Journal:  Phys Rev Lett        ISSN: 0031-9007            Impact factor:   9.161


  5 in total

1.  Diabolical points in multi-scatterer optomechanical systems.

Authors:  Stefano Chesi; Ying-Dan Wang; Jason Twamley
Journal:  Sci Rep       Date:  2015-01-15       Impact factor: 4.379

2.  Weak Localization and Antilocalization in Topological Materials with Impurity Spin-Orbit Interactions.

Authors:  Weizhe Edward Liu; Ewelina M Hankiewicz; Dimitrie Culcer
Journal:  Materials (Basel)       Date:  2017-07-15       Impact factor: 3.623

3.  Proximity Effect induced transport Properties between MBE grown (Bi1-xSbx)2Se3 Topological Insulators and Magnetic Insulator CoFe2O4.

Authors:  Shun-Yu Huang; Cheong-Wei Chong; Yi Tung; Tzu-Chin Chen; Ki-Chi Wu; Min-Kai Lee; Jung-Chun-Andrew Huang; Z Li; H Qiu
Journal:  Sci Rep       Date:  2017-05-25       Impact factor: 4.379

4.  The dimensional crossover of quantum transport properties in few-layered Bi2Se3 thin films.

Authors:  Liang Yang; Zhenhua Wang; Mingze Li; Xuan P A Gao; Zhidong Zhang
Journal:  Nanoscale Adv       Date:  2019-04-17

5.  Thickness-dependent transport channels in topological insulator Bi2Se3 thin films grown by magnetron sputtering.

Authors:  Wen Jie Wang; Kuang Hong Gao; Zhi Qing Li
Journal:  Sci Rep       Date:  2016-05-04       Impact factor: 4.379

  5 in total

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