| Literature DB >> 24753042 |
Diana Car1, Jia Wang, Marcel A Verheijen, Erik P A M Bakkers, Sébastien R Plissard.
Abstract
Rational bottom-up assembly of nanowire networks may be a way to successfully continue the miniaturization in the semiconductor industry. A generic method is developed that ensures InSb nanowires meet under the optimal angle for the formation of single-crystalline structures, which represents a promising platform for the future random access memories based on Majorana fermions.Keywords: InSb; growth mechanisms; nanocrosses; nanowires; networks
Year: 2014 PMID: 24753042 DOI: 10.1002/adma.201400924
Source DB: PubMed Journal: Adv Mater ISSN: 0935-9648 Impact factor: 30.849