Literature DB >> 24752573

Graphene-based hybrid structures combined with functional materials of ferroelectrics and semiconductors.

Wenjing Jie1, Jianhua Hao.   

Abstract

Fundamental studies and applications of 2-dimensional (2D) graphene may be deepened and broadened via combining graphene sheets with various functional materials, which have been extended from the traditional insulator of SiO2 to a versatile range of dielectrics, semiconductors and metals, as well as organic compounds. Among them, ferroelectric materials have received much attention due to their unique ferroelectric polarization. As a result, many attractive characteristics can be shown in graphene/ferroelectric hybrid systems. On the other hand, graphene can be integrated with conventional semiconductors and some newly-discovered 2D layered materials to form distinct Schottky junctions, yielding fascinating behaviours and exhibiting the potential for various applications in future functional devices. This review article is an attempt to illustrate the most recent progress in the fabrication, operation principle, characterization, and promising applications of graphene-based hybrid structures combined with various functional materials, ranging from ferroelectrics to semiconductors. We focus on mechanically exfoliated and chemical-vapor-deposited graphene sheets integrated in numerous advanced devices. Some typical hybrid structures have been highlighted, aiming at potential applications in non-volatile memories, transparent flexible electrodes, solar cells, photodetectors, and so on.

Entities:  

Year:  2014        PMID: 24752573     DOI: 10.1039/c3nr06918d

Source DB:  PubMed          Journal:  Nanoscale        ISSN: 2040-3364            Impact factor:   7.790


  3 in total

1.  Tunnel injection from WS2 quantum dots to InGaN/GaN quantum wells.

Authors:  Svette Reina Merden Santiago; Septem P Caigas; Tzu-Neng Lin; Chi-Tsu Yuan; Ji-Lin Shen; Ching-Hsueh Chiu; Hao-Chung Kuo
Journal:  RSC Adv       Date:  2018-04-24       Impact factor: 4.036

2.  Seed/Catalyst-Free Growth of Gallium-Based Compound Materials on Graphene on Insulator by Electrochemical Deposition at Room Temperature.

Authors:  Freddawati Rashiddy Wong; Amgad Ahmed Ali; Kanji Yasui; Abdul Manaf Hashim
Journal:  Nanoscale Res Lett       Date:  2015-05-27       Impact factor: 4.703

3.  Giant magnetoelectric effect at the graphone/ferroelectric interface.

Authors:  Jie Wang; Yajun Zhang; M P K Sahoo; Takahiro Shimada; Takayuki Kitamura; Philippe Ghosez; Tong-Yi Zhang
Journal:  Sci Rep       Date:  2018-08-20       Impact factor: 4.379

  3 in total

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