| Literature DB >> 24751350 |
Yisong Lei1, Yuqing Yang1, Yebing Liu1, Hao Li1, Guanquan Wang1, Rui Hu1, Xiaoling Xiong1, Shunzhong Luo2.
Abstract
A tritium beta-voltaic battery using a crystalline silicon convertor composed of (100)Si/SiO2/Si3N4 film degrades remarkably with radiation from a high intensity titanium tritide film. Simulation and experiments were carried out to investigate the main factor causing the degradation. The radiation damages mainly comes from the x-ray emitted from the titanium tritide film and beta particle can relieve the damages. The x-ray radiation induced positive charges in the SiO2 film destroying the output property of the PN diode with the induction of an electric field.Entities:
Keywords: ESR; Geant4; Radiation damage; SiO(2)–Si; Soft x-ray; Tritium beta-voltaic
Year: 2014 PMID: 24751350 DOI: 10.1016/j.apradiso.2014.03.027
Source DB: PubMed Journal: Appl Radiat Isot ISSN: 0969-8043 Impact factor: 1.513