Literature DB >> 24742151

InGaN/GaN core-shell single nanowire light emitting diodes with graphene-based p-contact.

M Tchernycheva1, P Lavenus, H Zhang, A V Babichev, G Jacopin, M Shahmohammadi, F H Julien, R Ciechonski, G Vescovi, O Kryliouk.   

Abstract

We report on the demonstration of MOVPE-grown single nanowire InGaN/GaN core-shell light emitting diodes (LEDs) with a transparent graphene contact for hole injection. The electrical homogeneity of the graphene-contacted LED has been assessed by electron beam induced current microscopy. By comparing graphene-contacted and metal-contacted nanowire LEDs, we show that the contact layout determines the electroluminescence spectrum. The electroluminescence changes color from green to blue with increasing injection current. High-resolution cathodoluminescence on cleaved nanowires allows the location with high precision of the origin of different emitted wavelengths and demonstrates that the blue peak originates from the emission of the radial quantum well on the m-planes, whereas the green peak arises from the In-rich region at the junction between the m-planes and the semipolar planes. The spectral behavior of the electroluminescence is understood by modeling the current distribution within the nanowire.

Entities:  

Year:  2014        PMID: 24742151     DOI: 10.1021/nl5001295

Source DB:  PubMed          Journal:  Nano Lett        ISSN: 1530-6984            Impact factor:   11.189


  12 in total

1.  Light-Emitting Diodes Based on InGaN/GaN Nanowires on Microsphere-Lithography-Patterned Si Substrates.

Authors:  Liliia Dvoretckaia; Vladislav Gridchin; Alexey Mozharov; Alina Maksimova; Anna Dragunova; Ivan Melnichenko; Dmitry Mitin; Alexandr Vinogradov; Ivan Mukhin; Georgy Cirlin
Journal:  Nanomaterials (Basel)       Date:  2022-06-10       Impact factor: 5.719

2.  Engineering the carrier dynamics of InGaN nanowire white light-emitting diodes by distributed p-AlGaN electron blocking layers.

Authors:  Hieu Pham Trung Nguyen; Mehrdad Djavid; Steffi Y Woo; Xianhe Liu; Ashfiqua T Connie; Sharif Sadaf; Qi Wang; Gianluigi A Botton; Ishiang Shih; Zetian Mi
Journal:  Sci Rep       Date:  2015-01-16       Impact factor: 4.379

3.  Hydrogen Generation using non-polar coaxial InGaN/GaN Multiple Quantum Well Structure Formed on Hollow n-GaN Nanowires.

Authors:  Ji-Hyeon Park; Arjun Mandal; San Kang; Uddipta Chatterjee; Jin Soo Kim; Byung-Guon Park; Moon-Deock Kim; Kwang-Un Jeong; Cheul-Ro Lee
Journal:  Sci Rep       Date:  2016-08-24       Impact factor: 4.379

4.  Dopant-stimulated growth of GaN nanotube-like nanostructures on Si(111) by molecular beam epitaxy.

Authors:  Alexey D Bolshakov; Alexey M Mozharov; Georgiy A Sapunov; Igor V Shtrom; Nickolay V Sibirev; Vladimir V Fedorov; Evgeniy V Ubyivovk; Maria Tchernycheva; George E Cirlin; Ivan S Mukhin
Journal:  Beilstein J Nanotechnol       Date:  2018-01-15       Impact factor: 3.649

Review 5.  Flexible inorganic light emitting diodes based on semiconductor nanowires.

Authors:  Nan Guan; Xing Dai; Andrey V Babichev; François H Julien; Maria Tchernycheva
Journal:  Chem Sci       Date:  2017-10-02       Impact factor: 9.825

6.  Determination of strain relaxation in InGaN/GaN nanowalls from quantum confinement and exciton binding energy dependent photoluminescence peak.

Authors:  Sandeep Sankaranarayanan; Shonal Chouksey; Pratim Saha; Vikas Pendem; Ankit Udai; Tarni Aggarwal; Swaroop Ganguly; Dipankar Saha
Journal:  Sci Rep       Date:  2018-05-30       Impact factor: 4.379

7.  Silver Nanowire Transparent Conductive Electrodes for High-Efficiency III-Nitride Light-Emitting Diodes.

Authors:  Munsik Oh; Won-Yong Jin; Hyeon Jun Jeong; Mun Seok Jeong; Jae-Wook Kang; Hyunsoo Kim
Journal:  Sci Rep       Date:  2015-09-03       Impact factor: 4.379

8.  Substrate-Free InGaN/GaN Nanowire Light-Emitting Diodes.

Authors:  Vladimir Neplokh; Agnes Messanvi; Hezhi Zhang; Francois H Julien; Andrey Babichev; Joel Eymery; Christophe Durand; Maria Tchernycheva
Journal:  Nanoscale Res Lett       Date:  2015-11-17       Impact factor: 4.703

9.  Remote heteroepitaxy of GaN microrod heterostructures for deformable light-emitting diodes and wafer recycle.

Authors:  Junseok Jeong; Qingxiao Wang; Janghwan Cha; Dae Kwon Jin; Dong Hoon Shin; Sunah Kwon; Bong Kyun Kang; Jun Hyuk Jang; Woo Seok Yang; Yong Seok Choi; Jinkyoung Yoo; Jong Kyu Kim; Chul-Ho Lee; Sang Wook Lee; Anvar Zakhidov; Suklyun Hong; Moon J Kim; Young Joon Hong
Journal:  Sci Adv       Date:  2020-06-03       Impact factor: 14.136

Review 10.  Graphene as a Transparent Conductive Electrode in GaN-Based LEDs.

Authors:  Hehe Zhang; Jan Mischke; Wolfgang Mertin; Gerd Bacher
Journal:  Materials (Basel)       Date:  2022-03-16       Impact factor: 3.623

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