Literature DB >> 24742102

Revealing controllable nanowire transformation through cationic exchange for RRAM application.

Chun-Wei Huang1, Jui-Yuan Chen, Chung-Hua Chiu, Wen-Wei Wu.   

Abstract

One dimensional metal oxide nanostructures have attracted much attention owing to their fascinating functional properties. Among them, piezoelectricity and photocatalysts along with their related materials have stirred significant interests and widespread studies in recent years. In this work, we successfully transformed piezoelectric ZnO into photocatalytic TiO2 and formed TiO2/ZnO axial heterostructure nanowires with flat interfaces by solid to solid cationic exchange reactions in high vacuum (approximately 10(-8) Torr) transmission electron microscope (TEM). Kinetic behavior of the single crystalline TiO2 was systematically analyzed. The nanoscale growth rate of TiO2 has been measured using in situ TEM videos. On the basis of the rate, we can control the dimensions of the axial-nanoheterostructure. In addition, the unique Pt/ ZnO / TiO2/ ZnO /Pt heterostructures with complementary resistive switching (CRS) characteristics were designed to solve the important issue of sneak-peak current. The resistive switching behavior was attributed to the migration of oxygen and TiO2 layer served as reservoir, which was confirmed by energy dispersive spectrometry (EDS) analysis. This study not only supplied a distinct method to explore the transformation mechanisms but also exhibited the potential application of ZnO/TiO2 heterostructure in nanoscale crossbar array resistive random-access memory (RRAM).

Entities:  

Year:  2014        PMID: 24742102     DOI: 10.1021/nl500749q

Source DB:  PubMed          Journal:  Nano Lett        ISSN: 1530-6984            Impact factor:   11.189


  3 in total

1.  Electron beam irradiation for the formation of thick Ag film on Ag3PO4.

Authors:  João Paulo de Campos da Costa; Marcelo Assis; Vinícius Teodoro; Andre Rodrigues; Camila Cristina de Foggi; Miguel Angel San-Miguel; João Paulo Pereira do Carmo; Juan Andrés; Elson Longo
Journal:  RSC Adv       Date:  2020-06-08       Impact factor: 4.036

2.  Improvement of the performance in Cr-doped ZnO memory devices via control of oxygen defects.

Authors:  Sih-Sian Li; Yan-Kuin Su
Journal:  RSC Adv       Date:  2019-01-22       Impact factor: 4.036

Review 3.  Status and Prospects of ZnO-Based Resistive Switching Memory Devices.

Authors:  Firman Mangasa Simanjuntak; Debashis Panda; Kung-Hwa Wei; Tseung-Yuen Tseng
Journal:  Nanoscale Res Lett       Date:  2016-08-19       Impact factor: 4.703

  3 in total

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