Literature DB >> 24706490

The study of spin-valley coupling in atomically thin group VI transition metal dichalcogenides.

Bairen Zhu1, Hualing Zeng, Junfeng Dai, Xiaodong Cui.   

Abstract

In the hunt for ultimately thin electronic devices, atomically thin layers of group VI transition metal dichalcogenides (TMDCs) are recognized as ideal 2D materials after the success of graphene. Monolayer TMDCs feature nonzero but contrasting Berry curvatures and valence-band spin splitting with opposite sign at inequivalent K and K' valleys located at the corners of the 1st Brillouin zone. These features raise the possibility of manipulating electrons' valley and spin degrees of freedom by optical and electric means, which subsequently makes monolayer TMDCs promising candidates for spintronics and valleytronics applications.
© 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Entities:  

Keywords:  spin-valley couplings; spintronics; transition metal dichalcogenides; valleytronics

Year:  2014        PMID: 24706490     DOI: 10.1002/adma.201305367

Source DB:  PubMed          Journal:  Adv Mater        ISSN: 0935-9648            Impact factor:   30.849


  2 in total

1.  Surface group-modified MXene nano-flake doping of monolayer tungsten disulfides.

Authors:  Ye Tao; See Wee Koh; Xuechao Yu; Chongwu Wang; Houkun Liang; Ying Zhang; Hong Li; Qi Jie Wang
Journal:  Nanoscale Adv       Date:  2019-10-16

2.  Characterizing transition-metal dichalcogenide thin-films using hyperspectral imaging and machine learning.

Authors:  Brian Shevitski; Christopher T Chen; Christoph Kastl; Tevye Kuykendall; Adam Schwartzberg; Shaul Aloni; Alex Zettl
Journal:  Sci Rep       Date:  2020-07-14       Impact factor: 4.996

  2 in total

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