Literature DB >> 24706476

Spectroscopic proof of the correlation between redox-state and charge-carrier transport at the interface of resistively switching Ti/PCMO devices.

Anja Herpers1, Christian Lenser, Chanwoo Park, Francesco Offi, Francesco Borgatti, Giancarlo Panaccione, Stephan Menzel, Rainer Waser, Regina Dittmann.   

Abstract

By using hard X-ray photoelectron spectroscopy experimentally, proof is provided that resistive switching in Ti/Pr₀.₄₈ Ca₀.₅₂ MnO₃ (PCMO) devices is based on a redox-process that mainly occurs on the Ti-side. The different resistance states are determined by the amount of fully oxidized Ti-ions in the stack, implying a reversible redox-reaction at the interface, which governs the formation and shortening of an insulating tunnel barrier.
© 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Keywords:  HAXPES; PCMO; RRAM; redox-reaction; resistive switching

Year:  2014        PMID: 24706476     DOI: 10.1002/adma.201304054

Source DB:  PubMed          Journal:  Adv Mater        ISSN: 0935-9648            Impact factor:   30.849


  1 in total

1.  Metal-Organic Chemical Vapor Deposition (MOCVD) Synthesis of Heteroepitaxial Pr0.7Ca0.3MnO3 Films: Effects of Processing Conditions on Structural/Morphological and Functional Properties.

Authors:  Maria R Catalano; Giuseppe Cucinotta; Emanuela Schilirò; Matteo Mannini; Andrea Caneschi; Raffaella Lo Nigro; Emanuele Smecca; Guglielmo G Condorelli; Graziella Malandrino
Journal:  ChemistryOpen       Date:  2015-06-05       Impact factor: 2.911

  1 in total

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