| Literature DB >> 24706476 |
Anja Herpers1, Christian Lenser, Chanwoo Park, Francesco Offi, Francesco Borgatti, Giancarlo Panaccione, Stephan Menzel, Rainer Waser, Regina Dittmann.
Abstract
By using hard X-ray photoelectron spectroscopy experimentally, proof is provided that resistive switching in Ti/Pr₀.₄₈ Ca₀.₅₂ MnO₃ (PCMO) devices is based on a redox-process that mainly occurs on the Ti-side. The different resistance states are determined by the amount of fully oxidized Ti-ions in the stack, implying a reversible redox-reaction at the interface, which governs the formation and shortening of an insulating tunnel barrier.Keywords: HAXPES; PCMO; RRAM; redox-reaction; resistive switching
Year: 2014 PMID: 24706476 DOI: 10.1002/adma.201304054
Source DB: PubMed Journal: Adv Mater ISSN: 0935-9648 Impact factor: 30.849