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Literature DB >> 24677312

Growth of large-area 2D MoS₂(₁-x) Se₂x semiconductor alloys.

Qingliang Feng¹, Yiming Zhu, Jinhua Hong, Mei Zhang, Wenjie Duan, Nannan Mao, Juanxia Wu, Hua Xu, Fengliang Dong, Fang Lin, Chuanhong Jin, Chunming Wang, Jin Zhang, Liming Xie.

Abstract

Semiconducting MoS₂(₁-x) Se₂x mono-layers where x = 0-0.40 are successfully grown over large areas. A random arrangement of the S and Se atoms and a tunable bandgap photoluminescence are observed. Atomically thin, 2D semiconductor alloys with tunable bandgaps have potential applications in nano- and opto-electronics. Field-effect transistors fabricated with the monolayers exhibit high on/off ratios of >10(5).

Entities: Disease

Keywords: chemical vapor deposition; electrical properties; molybdenum; semiconductor alloys; tunable bandgaps; two-dimensional materials

Year: 2014 PMID： 24677312 DOI： 10.1002/adma.201306095

Source DB: PubMed Journal: Adv Mater ISSN： 0935-9648 Impact factor: 30.849

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Cited

29 in total

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Authors: Prasana K Sahoo; Shahriar Memaran; Yan Xin; Luis Balicas; Humberto R Gutiérrez
Journal: Nature Date: 2018-01-03 Impact factor: 49.962

2. High-mobility three-atom-thick semiconducting films with wafer-scale homogeneity.

Authors: Kibum Kang; Saien Xie; Lujie Huang; Yimo Han; Pinshane Y Huang; Kin Fai Mak; Cheol-Joo Kim; David Muller; Jiwoong Park
Journal: Nature Date: 2015-04-30 Impact factor: 49.962

3. Reproducible Performance Improvements to Monolayer MoS₂ Transistors through Exposed Material Forming Gas Annealing.

Authors: Nicholas B Guros; Son T Le; Siyuan Zhang; Brent A Sperling; Jeffery B Klauda; Curt A Richter; Arvind Balijepalli
Journal: ACS Appl Mater Interfaces Date: 2019-04-29 Impact factor: 9.229

4. Random anion distribution in MS _x Se_2-x (M = Mo, W) crystals and nanosheets.

Authors: Minh An T Nguyen; Arnab Sen Gupta; Jacob Shevrin; Hirofumi Akamatsu; Pengtao Xu; Zhong Lin; Ke Wang; Jun Zhu; Venkatraman Gopalan; Mauricio Terrones; Thomas E Mallouk
Journal: RSC Adv Date: 2018-03-09 Impact factor: 4.036

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Authors: Manoj K Jana; C N R Rao
Journal: Philos Trans A Math Phys Eng Sci Date: 2016-09-13 Impact factor: 4.226

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Authors: Wenwen Yao; Zhilin Kang; Jiajun Deng; Yan Chen; Qian Song; Xun Lei Ding; Fangchao Lu; Wenjie Wang
Journal: RSC Adv Date: 2020-11-20 Impact factor: 4.036

7. Controllable synthesis of molybdenum tungsten disulfide alloy for vertically composition-controlled multilayer.

Authors: Jeong-Gyu Song; Gyeong Hee Ryu; Su Jeong Lee; Sangwan Sim; Chang Wan Lee; Taejin Choi; Hanearl Jung; Youngjun Kim; Zonghoon Lee; Jae-Min Myoung; Christian Dussarrat; Clement Lansalot-Matras; Jusang Park; Hyunyong Choi; Hyungjun Kim
Journal: Nat Commun Date: 2015-07-23 Impact factor: 14.919

8. Exploring atomic defects in molybdenum disulphide monolayers.

Authors: Jinhua Hong; Zhixin Hu; Matt Probert; Kun Li; Danhui Lv; Xinan Yang; Lin Gu; Nannan Mao; Qingliang Feng; Liming Xie; Jin Zhang; Dianzhong Wu; Zhiyong Zhang; Chuanhong Jin; Wei Ji; Xixiang Zhang; Jun Yuan; Ze Zhang
Journal: Nat Commun Date: 2015-02-19 Impact factor: 14.919

9. Influence of stoichiometry on the optical and electrical properties of chemical vapor deposition derived MoS2.

Authors: In Soo Kim; Vinod K Sangwan; Deep Jariwala; Joshua D Wood; Spencer Park; Kan-Sheng Chen; Fengyuan Shi; Francisco Ruiz-Zepeda; Arturo Ponce; Miguel Jose-Yacaman; Vinayak P Dravid; Tobin J Marks; Mark C Hersam; Lincoln J Lauhon
Journal: ACS Nano Date: 2014-09-22 Impact factor: 15.881

10. Mapping of Low-Frequency Raman Modes in CVD-Grown Transition Metal Dichalcogenides: Layer Number, Stacking Orientation and Resonant Effects.

Authors: Maria O'Brien; Niall McEvoy; Damien Hanlon; Toby Hallam; Jonathan N Coleman; Georg S Duesberg
Journal: Sci Rep Date: 2016-01-14 Impact factor: 4.379