| Literature DB >> 24677272 |
Min Qian1, Yiming Pan, Fengyuan Liu, Miao Wang, Haoliang Shen, Daowei He, Baigeng Wang, Yi Shi, Feng Miao, Xinran Wang.
Abstract
Memristive devices based on vertical heterostructures of graphene and TiOx show a significant power reduction that is up to ∼10(3) times smaller than that of conventional structures. This power reduction arises as a result of a tunneling barrier at the interface. The barrier is tunable, opening up the possibility of engineering several key memory characteristics.Entities:
Keywords: graphene; heterostructures; memristivity; switching devices; ultralow power
Year: 2014 PMID： 24677272 DOI： 10.1002/adma.201306028
Source DB: PubMed Journal: Adv Mater ISSN： 0935-9648 Impact factor: 30.849