| Literature DB >> 24664491 |
Masayuki Suda1, Yoshitaka Kawasugi, Takeo Minari, Kazuhito Tsukagoshi, Reizo Kato, Hiroshi M Yamamoto.
Abstract
A novel type of flexible organic field-effect transistor in which strain effects can be finely tuned continuously has been fabricated. In this novel device structure, electronic phases can be controlled both by "band-filling" and by "band-width" continuously. Finally, co-regulation of "band-filling" and "band-width" in the strongly-correlated organic material realize field-induced emergence of superconducting fractions at low temperature.Keywords: charge-transfer complex; field-effect transistor; mott transition; strain-effect; superconductivity
Year: 2014 PMID: 24664491 DOI: 10.1002/adma.201305797
Source DB: PubMed Journal: Adv Mater ISSN: 0935-9648 Impact factor: 30.849