Literature DB >> 24634096

Bipolar electrochemical mechanism for mass transfer in nanoionic resistive memories.

Xuezeng Tian1, Shize Yang, Min Zeng, Lifen Wang, Jiake Wei, Zhi Xu, Wenlong Wang, Xuedong Bai.   

Abstract

Keywords:  bipolar electrochemistry; electrochemical memories; nanoionics; switches

Year:  2014        PMID： 24634096     DOI： 10.1002/adma.201400127

Source DB:  PubMed          Journal:  Adv Mater        ISSN： 0935-9648            Impact factor:   30.849


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  13 in total

1.  Memristors with diffusive dynamics as synaptic emulators for neuromorphic computing.

Authors:  Zhongrui Wang; Saumil Joshi; Sergey E Savel'ev; Hao Jiang; Rivu Midya; Peng Lin; Miao Hu; Ning Ge; John Paul Strachan; Zhiyong Li; Qing Wu; Mark Barnell; Geng-Lin Li; Huolin L Xin; R Stanley Williams; Qiangfei Xia; J Joshua Yang
Journal:  Nat Mater       Date:  2016-09-26       Impact factor: 43.841

2.  Configurable switching behavior in polymer-based resistive memories by adopting unique electrode/electrolyte arrangement.

Authors:  Karthik Krishnan; Shaikh Mohammad Tauquir; Saranyan Vijayaraghavan; Ramesh Mohan
Journal:  RSC Adv       Date:  2021-07-02       Impact factor: 4.036

3.  Atomic View of Filament Growth in Electrochemical Memristive Elements.

Authors:  Hangbing Lv; Xiaoxin Xu; Pengxiao Sun; Hongtao Liu; Qing Luo; Qi Liu; Writam Banerjee; Haitao Sun; Shibing Long; Ling Li; Ming Liu
Journal:  Sci Rep       Date:  2015-08-21       Impact factor: 4.379

4.  Anisotropic Magnetoresistance of Nano-conductive Filament in Co/HfO2/Pt Resistive Switching Memory.

Authors:  Leilei Li; Yang Liu; Jiao Teng; Shibing Long; Qixun Guo; Meiyun Zhang; Yu Wu; Guanghua Yu; Qi Liu; Hangbing Lv; Ming Liu
Journal:  Nanoscale Res Lett       Date:  2017-03-22       Impact factor: 4.703

5.  Resistive switching mechanism in the one diode-one resistor memory based on p+-Si/n-ZnO heterostructure revealed by in-situ TEM.

Authors:  Lei Zhang; Liang Zhu; Xiaomei Li; Zhi Xu; Wenlong Wang; Xuedong Bai
Journal:  Sci Rep       Date:  2017-03-21       Impact factor: 4.379

6.  Capacitive neural network with neuro-transistors.

Authors:  Zhongrui Wang; Mingyi Rao; Jin-Woo Han; Jiaming Zhang; Peng Lin; Yunning Li; Can Li; Wenhao Song; Shiva Asapu; Rivu Midya; Ye Zhuo; Hao Jiang; Jung Ho Yoon; Navnidhi Kumar Upadhyay; Saumil Joshi; Miao Hu; John Paul Strachan; Mark Barnell; Qing Wu; Huaqiang Wu; Qinru Qiu; R Stanley Williams; Qiangfei Xia; J Joshua Yang
Journal:  Nat Commun       Date:  2018-08-10       Impact factor: 14.919

7.  PMMA interlayer-modulated memory effects by space charge polarization in resistive switching based on CuSCN-nanopyramids/ZnO-nanorods p-n heterojunction.

Authors:  Baochang Cheng; Jie Zhao; Li Xiao; Qiangsheng Cai; Rui Guo; Yanhe Xiao; Shuijin Lei
Journal:  Sci Rep       Date:  2015-12-09       Impact factor: 4.379

8.  Integration scheme of nanoscale resistive switching memory using bottom-up processes at room temperature for high-density memory applications.

Authors:  Un-Bin Han; Jang-Sik Lee
Journal:  Sci Rep       Date:  2016-07-01       Impact factor: 4.379

9.  Conductance Quantization in Resistive Random Access Memory.

Authors:  Yang Li; Shibing Long; Yang Liu; Chen Hu; Jiao Teng; Qi Liu; Hangbing Lv; Jordi Suñé; Ming Liu
Journal:  Nanoscale Res Lett       Date:  2015-10-26       Impact factor: 4.703

10.  Atomic Scale Modulation of Self-Rectifying Resistive Switching by Interfacial Defects.

Authors:  Xing Wu; Kaihao Yu; Dongkyu Cha; Michel Bosman; Nagarajan Raghavan; Xixiang Zhang; Kun Li; Qi Liu; Litao Sun; Kinleong Pey
Journal:  Adv Sci (Weinh)       Date:  2018-04-14       Impact factor: 16.806
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