Literature DB >> 24633993

Storage of electrical information in metal-organic-framework memristors.

Seok Min Yoon1, Scott C Warren, Bartosz A Grzybowski.   

Abstract

Single crystals of a cyclodextrin-based metal-organic framework (MOF) infused with an ionic electrolyte and flanked by silver electrodes act as memristors. They can be electrically switched between low and high conductivity states that persist even in the absence of an applied voltage. In this way, these small blocks of nanoporous sugar function as a non-volatile RRAM memory elements that can be repeatedly read, erased, and re-written. These properties derive from ionic current within the MOF and the deposition of nanometer-thin passivating layers at the anode flanking the MOF crystal. The observed phenomena are crucially dependent on the sub-nanometer widths of the channels in the MOF, allowing the passage of only smaller ions. Conversely, with the electrolyte present but no MOF, there are no memristance or memory effects.
© 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Entities:  

Keywords:  memristors; metal-organic frameworks; negative differential resistance; non-volatile memory; resistive random access memory

Year:  2014        PMID: 24633993     DOI: 10.1002/anie.201309642

Source DB:  PubMed          Journal:  Angew Chem Int Ed Engl        ISSN: 1433-7851            Impact factor:   15.336


  8 in total

1.  Improvement in Thermal Stability of Sucralose by γ-Cyclodextrin Metal-Organic Frameworks.

Authors:  Nana Lv; Tao Guo; Botao Liu; Caifen Wang; Vikaramjeet Singh; Xiaonan Xu; Xue Li; Dawei Chen; Ruxandra Gref; Jiwen Zhang
Journal:  Pharm Res       Date:  2016-11-28       Impact factor: 4.200

Review 2.  Switched Proton Conduction in Metal-Organic Frameworks.

Authors:  Fahui Xiang; Shimin Chen; Zhen Yuan; Lu Li; Zhiwen Fan; Zizhu Yao; Chulong Liu; Shengchang Xiang; Zhangjing Zhang
Journal:  JACS Au       Date:  2022-05-04

3.  Tuning of resistive memory switching in electropolymerized metallopolymeric films.

Authors:  Bin-Bin Cui; Zupan Mao; Yuxia Chen; Yu-Wu Zhong; Gui Yu; Chuanlang Zhan; Jiannian Yao
Journal:  Chem Sci       Date:  2014-11-24       Impact factor: 9.825

4.  Simultaneous implementation of resistive switching and rectifying effects in a metal-organic framework with switched hydrogen bond pathway.

Authors:  Zizhu Yao; Liang Pan; Lizhen Liu; Jindan Zhang; Quanjie Lin; Yingxiang Ye; Zhangjing Zhang; Shengchang Xiang; Banglin Chen
Journal:  Sci Adv       Date:  2019-08-02       Impact factor: 14.136

5.  ZnO-porous silicon nanocomposite for possible memristive device fabrication.

Authors:  Lizeth Martínez; Oscar Ocampo; Yogesh Kumar; Vivechana Agarwal
Journal:  Nanoscale Res Lett       Date:  2014-08-27       Impact factor: 4.703

6.  Resistive Switching Memory Phenomena in PEDOT PSS: Coexistence of Switchable Diode Effect and Write Once Read Many Memory.

Authors:  Viet Cuong Nguyen; Pooi See Lee
Journal:  Sci Rep       Date:  2016-01-25       Impact factor: 4.379

7.  Nucleation and Early Stages of Layer-by-Layer Growth of Metal Organic Frameworks on Surfaces.

Authors:  Alex Summerfield; Izabela Cebula; Martin Schröder; Peter H Beton
Journal:  J Phys Chem C Nanomater Interfaces       Date:  2015-09-24       Impact factor: 4.126

Review 8.  Metal-Organic Frameworks in Modern Physics: Highlights and Perspectives.

Authors:  Yuri A Mezenov; Andrei A Krasilin; Vladimir P Dzyuba; Alexandre Nominé; Valentin A Milichko
Journal:  Adv Sci (Weinh)       Date:  2019-07-18       Impact factor: 16.806

  8 in total

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