Literature DB >> 24619544

Mechanisms of silicon sputtering and cluster formation explained by atomic level simulations.

Peter R Barry1, Patrick Philipp, Tom Wirtz, John Kieffer.   

Abstract

In low-energy secondary ion MS, collision cascades result in rare sputter events or unfavourably low sputter yields. To better identify the origin of emission products generated by low-energy ion impacts, we carried out molecular dynamics simulations of the underlying collision cascades, using a reactive force field that accounts for the dynamic breaking and forming of bonds. A detailed explanation of the cluster formation and ejection processes for atomic oxygen and also atomic silicon bombardment of Si (100) is given for comparison.
Copyright © 2014 John Wiley & Sons, Ltd.

Entities:  

Keywords:  SIMS; clusters; oxygen; silicon; simulation

Year:  2014        PMID: 24619544     DOI: 10.1002/jms.3317

Source DB:  PubMed          Journal:  J Mass Spectrom        ISSN: 1076-5174            Impact factor:   1.982


  2 in total

1.  Influence of water contamination on the sputtering of silicon with low-energy argon ions investigated by molecular dynamics simulations.

Authors:  Grégoire R N Defoort-Levkov; Alan Bahm; Patrick Philipp
Journal:  Beilstein J Nanotechnol       Date:  2022-09-21       Impact factor: 3.272

2.  Experimental and simulation-based investigation of He, Ne and Ar irradiation of polymers for ion microscopy.

Authors:  Lukasz Rzeznik; Yves Fleming; Tom Wirtz; Patrick Philipp
Journal:  Beilstein J Nanotechnol       Date:  2016-08-02       Impact factor: 3.649

  2 in total

北京卡尤迪生物科技股份有限公司 © 2022-2023.