Literature DB >> 24616066

Defect-controlled electronic properties in AZn₂Sb₂ Zintl phases.

Gregory S Pomrehn1, Alex Zevalkink, Wolfgang G Zeier, Axel van de Walle, G Jeffrey Snyder.   

Abstract

Experimentally, AZn2Sb2 samples (A=Ca, Sr, Eu, Yb) are found to have large charge carrier concentrations that increase with increasing electronegativity of A. Using density functional theory (DFT) calculations, we show that this trend can be explained by stable cation vacancies and the corresponding finite phase width in A(1-x)Zn2Sb2 compounds.
© 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Keywords:  Zintl phases; defect formation; electronic transport; phase stability

Year:  2014        PMID: 24616066     DOI: 10.1002/anie.201311125

Source DB:  PubMed          Journal:  Angew Chem Int Ed Engl        ISSN: 1433-7851            Impact factor:   15.336


  1 in total

1.  Vacancy ordering induced topological electronic transition in bulk Eu2ZnSb2.

Authors:  Honghao Yao; Chen Chen; Wenhua Xue; Fengxian Bai; Feng Cao; Yucheng Lan; Xingjun Liu; Yumei Wang; David J Singh; Xi Lin; Qian Zhang
Journal:  Sci Adv       Date:  2021-02-05       Impact factor: 14.136

  1 in total

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