| Literature DB >> 24569823 |
Antoine Blin1, Ismaïl Cissé1, Ulrich Bockelmann1.
Abstract
We describe an approach to substituting a fluorescence microarray with a surface made of an arrangement of electrolyte-gated field effect transistors. This was achieved using a dedicated blocking of non-specific interactions and comparing threshold voltage shifts of transistors exhibiting probe molecules of different base sequence. We apply the approach to detection of the 35delG mutation, which is related to non-syndromic deafness and is one of the most frequent mutations in humans. The process involves barcode sequences that are generated by Tas-PCR, a newly developed replication reaction using polymerase blocking. The barcodes are recognized by hybridization to surface attached probes and are directly detected by the semiconductor device.Entities:
Mesh:
Substances:
Year: 2014 PMID: 24569823 PMCID: PMC3935197 DOI: 10.1038/srep04194
Source DB: PubMed Journal: Sci Rep ISSN: 2045-2322 Impact factor: 4.379
Figure 1The FET array and its measurement configuration.
Top. Schematic cross-sectional view of an FET array with two regions where probes are attached to the oxide surface. Each probe region (P1 and P2) extends over several individual transistors (presented in red underneath the gate oxide). The surface of the device is covered by a KCl solution and a Ag/AgCl electrode is immersed. On the right, a zoom of an individual transistor with a schema of its electrical connections is presented. A voltage U is applied between the electrode and a common source contact and a voltage U is applied between the source contact and each individually connected drain. The drain currents I of all transistors are measured. Bottom. Microscope image of two micro-spots on a FET array. Each spot exhibits a diameter of approximately 100 μm and covers about 5 individual transistors. The active (metal-free gate) regions appear as white rectangles. In the upper part, the light gray lines are individual drain connexions and the dark gray regions correspond to lateral electrical isolation. The wide rectangle in the middle corresponds to the region where a 500 nm thick oxide coating has been removed to expose the FET array to the electrolyte. The homogenous part in the bottom is the common source connexion. A 100 μm scale bar is shown in the bottom right corner.
Figure 2Electronic detection of DNA oligonucleotide hybridization.
Electronic detection of specific hybridization between P2 probe DNA and T2 target oligonucleotides is shown in the main figure. The image shown at the top visualizes the fluorescence signal arising from the hybridized Cy3-modified T2 targets. The individual transistors of the array are seen in the fluorescence image.
Statistics of the electronic hybridization detection
| Exp | target | Δ | Δ | Δ | Ok (abs,rel) | Δ | Δ |
|---|---|---|---|---|---|---|---|
| 1a | T1 | 4.6 ± 0.5 | 6.7 ± 0.3 | −2.0 ± 0.5 | 47, 100 | −1.0 ± 0.5 | 0.9 ± 0.3 |
| 1b | T2 | 2.0 ± 0.7 | −0.4 ± 0.4 | 2.4 ± 0.7 | 41, 100 | 1.4 ± 0.7 | −1.0 ± 0.4 |
| 2a | T1 | −8.1 ± 1.1 | −3.7 ± 0.8 | −4.4 ± 1.2 | 29, 100 | −0.4 ± 1.2 | 4.0 ± 0.9 |
| 2b | T2 | 3.5 ± 1.2 | 2.8 ± 0.8 | 0.7 ± 1.2 | 16, 57 | −0.7 ± 1.2 | −1.4 ± 0.8 |
| 3a | T1 | 8.2 ± 0.3 | 10.3 ± 0.6 | −2.1 ± 0.6 | 19, 100 | −1.9 ± 0.6 | 0.2 ± 0.6 |
| 3b | T2 | −1.3 ± 0.3 | −3.7 ± 0.6 | 2.3 ± 0.6 | 21, 91 | −3.7 ± 0.3 | −6.0 ± 0.6 |
| 4a | T2 | 1.8 ± 0.4 | −0.3 ± 0.2 | 2.1 ±0.4 | 18, 100 | 0.1 ± 0.4 | −2.0 ± 0.3 |
| 4b | T1 | −5.5 ± 0.4 | −2.8 ± 0.2 | −2.6 ± 0.4 | 14, 100 | −1.6 ± 0.4 | 1.0 ± 0.3 |
Two successive hybridizations were performed on each of four different FET arrays, without stripping surface bound DNA after the first hybridization. The leftmost column gives the number of the array and a suffix. Suffix a stands for the first hybridization, b for the second one. Either T1 or T2 target oligonucleotides were used, as given in the ”target” column. Columns ΔU1 and ΔU2 display average and mean-square deviation of the threshold voltage shifts of the transistors covered by probes P1 and P2, respectively. Column ΔU1, gives the difference ΔU1, = ΔU1 − ΔU2. We observe that the sign of the average ΔU1, is always negative for hybridization with target T1 and always positive for hybridization with T2. This sign is thus interpreted as the electronic signal of specific hybridization. Number and percentage of individual FETs displaying the correct sign of the shift are provided by the ”Ok” column. To derive this column, the difference between the ΔU of each individual FET carrying probes complementary to the target DNA and the average shift of all transistors carrying the non-complementary probe DNA is calculated. It can be seen that the direction of specific hybridization is correctly detected by more than 90% of the FETs in seven out of eight recognition reactions. In total, 205 of 219 (94%) individual FET signals show the correct sign. We define ΔU as the threshold voltage shift of the transistors without DNA probes. Columns ΔU1, and ΔU2, provide the difference ΔU1 − ΔU and ΔU2 − ΔU, respectively. Experiment 3b is presented in Fig. 2.
Figure 3Principle of Tas-PCR genotyping.
(a) Homozygote wt sample. Forward primer Fwt is hybridized at its 3′ end, while primer Fmut is mismatched. After Tas-PCR only molecules with barcode T2 are generated. (b) Homozygote mutant sample. Fmut is hybridized, while Fwt is mismatched. After Tas-PCR only molecules with barcode T1 are generated. (c) Heterozygote sample. Both Fwt and Fmut are hybridized. Tas-PCR generates molecules with barcodes T1 and T2.
Figure 4Detection of a DNA point mutation by Tas-PCR and subsequent electronic hybridization measurement.
Probes P1 have been spotted on transistors 9–17 and 60–69 and probes P2 on 33–40 and 84–92. Electronic signal (main figure) and fluorescence image (top) show that hybridization specifically occurred on probes P1. As for hybridization with oligonucleotide targets, FETs carrying hybridized probes display higher average voltage difference −ΔU than non-hybridized probes; 3.9 ± 2.0 mV for P1 versus 2.6 ± 1.5 mV for P2. Exploiting the FETs that carried no DNA, we here corrected for threshold voltage drifts between the transistors of the array14.