| Literature DB >> 24535970 |
Luying Li1, Zhaofeng Gan, Martha R McCartney, Hanshuang Liang, Hongbin Yu, Wan-Jian Yin, Yanfa Yan, Yihua Gao, Jianbo Wang, David J Smith.
Abstract
Polarization fields within InAs nanopillars with zincblende(ZB)/wurtzite(WZ) polytype stacking are quantified. The displacement of charged ions inside individual tetrahedra of WZ regions is measured at the atomic scale. The variations of spontaneous polarization along the interface normal are related to strain at interfaces of different polytypes. Thus, direct correlation between local atomic structure and electric properties is demonstrated.Entities:
Keywords: InAs; nanopillars; off-axis electron holography; polytype heterocrystalline structures; probe-corrected HAADF imaging; spontaneous polarization
Year: 2013 PMID： 24535970 DOI： 10.1002/adma.201304021
Source DB: PubMed Journal: Adv Mater ISSN： 0935-9648 Impact factor: 30.849