Design optimization of high pressure and high temperature piezoresistive pressure sensor for high sensitivity.

This paper describes a design method for optimizing sensitivity of piezoresistive pressure sensor in high-pressure and high-temperature environment. In order to prove the method, a piezoresistive pressure sensor (HPTSS) is designed. With the purpose of increasing sensitivity and to improve the measurement range, the piezoresistive sensor adopts rectangular membrane and thick film structure. The configuration of piezoresistors is arranged according to the characteristic of the rectangular membrane. The structure and configuration of the sensor chip are analyzed theoretically and simulated by the finite element method. This design enables the sensor chip to operate in high pressure condition (such as 150 MPa) with a high sensitivity and accuracy. The silicon on insulator wafer is selected to guarantee the thermo stability of the sensor chip. In order to optimize the fabrication and improve the yield of production, an electric conduction step is devised. Series of experiments demonstrates a favorable linearity of 0.13% and a high accuracy of 0.48%. And the sensitivity of HTPSS is about six times as high as a conventional square-membrane sensor chip in the experiment. Compared with the square-membrane pressure sensor and current production, the strength of HPTTS lies in sensitivity and measurement. The performance of the HPTSS indicates that it could be an ideal candidate for high-pressure and high-temperature sensing in real application.