Literature DB >> 24514613

Low power 50 Gb/s silicon traveling wave Mach-Zehnder modulator near 1300 nm.

Matthew Streshinsky, Ran Ding, Yang Liu, Ari Novack, Yisu Yang, Yangjin Ma, Xiaoguang Tu, Edward Koh Sing Chee, Andy Eu-Jin Lim, Patrick Guo-Qiang Lo, Tom Baehr-Jones, Michael Hochberg.   

Abstract

The wavelength band near 1300 nm is attractive for many telecommunications applications, yet there are few results in silicon that demonstrate high-speed modulation in this band. We present the first silicon modulator to operate at 50 Gbps near 1300 nm. We demonstrate an open eye at this speed using a differential 1.5 V(pp) signal at 0 V reverse bias, achieving an energy efficiency of 450 fJ/bit.

Year:  2013        PMID: 24514613     DOI: 10.1364/OE.21.030350

Source DB:  PubMed          Journal:  Opt Express        ISSN: 1094-4087            Impact factor:   3.894


  2 in total

1.  Monolithic Integration of O-Band InAs Quantum Dot Lasers with Engineered GaAs Virtual Substrate Based on Silicon.

Authors:  Buqing Xu; Guilei Wang; Yong Du; Yuanhao Miao; Ben Li; Xuewei Zhao; Hongxiao Lin; Jiahan Yu; Jiale Su; Yan Dong; Tianchun Ye; Henry H Radamson
Journal:  Nanomaterials (Basel)       Date:  2022-08-05       Impact factor: 5.719

Review 2.  Heterogeneously-Integrated Optical Phase Shifters for Next-Generation Modulators and Switches on a Silicon Photonics Platform: A Review.

Authors:  Younghyun Kim; Jae-Hoon Han; Daehwan Ahn; Sanghyeon Kim
Journal:  Micromachines (Basel)       Date:  2021-05-28       Impact factor: 2.891

  2 in total

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