Literature DB >> 24497002

Graphene based non-volatile memory devices.

Xiaomu Wang1, Weiguang Xie, Jian-Bin Xu.   

Abstract

With the continuous advance of modern electronics, the demand for non-volatile memory cells rapidly grows. As a promising material for post-silicon electronic applications, graphene non-volatile memory cells have received renewed interest due to its outstanding electronic and other physical properties. This research news briefly summarizes the recent progress in this area. Appealing research activities and technical trends are highlighted. Afterwards, requirements and aims of future graphene non-volatile memory cells that may possibly influence their commercialization are also discussed.
© 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Entities:  

Keywords:  flexible electronics; graphene; monolithic memory; non-volatile memory; resistive memory

Year:  2014        PMID: 24497002     DOI: 10.1002/adma.201306041

Source DB:  PubMed          Journal:  Adv Mater        ISSN: 0935-9648            Impact factor:   30.849


  6 in total

Review 1.  Decade of 2D-materials-based RRAM devices: a review.

Authors:  Muhammad Muqeet Rehman; Hafiz Mohammad Mutee Ur Rehman; Jahan Zeb Gul; Woo Young Kim; Khasan S Karimov; Nisar Ahmed
Journal:  Sci Technol Adv Mater       Date:  2020-03-18       Impact factor: 8.090

2.  Giant magnetoelectric effect at the graphone/ferroelectric interface.

Authors:  Jie Wang; Yajun Zhang; M P K Sahoo; Takahiro Shimada; Takayuki Kitamura; Philippe Ghosez; Tong-Yi Zhang
Journal:  Sci Rep       Date:  2018-08-20       Impact factor: 4.379

3.  Analytical development and optimization of a graphene-solution interface capacitance model.

Authors:  Hediyeh Karimi; Rasoul Rahmani; Reza Mashayekhi; Leyla Ranjbari; Amir H Shirdel; Niloofar Haghighian; Parisa Movahedi; Moein Hadiyan; Razali Ismail
Journal:  Beilstein J Nanotechnol       Date:  2014-05-09       Impact factor: 3.649

4.  Focused Role of an Organic Small-Molecule PBD on Performance of the Bistable Resistive Switching.

Authors:  Lei Li; Yanmei Sun; Chunpeng Ai; Junguo Lu; Dianzhong Wen; Xuduo Bai
Journal:  Nanoscale Res Lett       Date:  2015-11-16       Impact factor: 4.703

5.  Graphene-ferroelectric metadevices for nonvolatile memory and reconfigurable logic-gate operations.

Authors:  Woo Young Kim; Hyeon-Don Kim; Teun-Teun Kim; Hyun-Sung Park; Kanghee Lee; Hyun Joo Choi; Seung Hoon Lee; Jaehyeon Son; Namkyoo Park; Bumki Min
Journal:  Nat Commun       Date:  2016-01-27       Impact factor: 14.919

Review 6.  Memristive Non-Volatile Memory Based on Graphene Materials.

Authors:  Zongjie Shen; Chun Zhao; Yanfei Qi; Ivona Z Mitrovic; Li Yang; Jiacheng Wen; Yanbo Huang; Puzhuo Li; Cezhou Zhao
Journal:  Micromachines (Basel)       Date:  2020-03-25       Impact factor: 2.891

  6 in total

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