| Literature DB >> 24474071 |
Yichi Zhang1, Je-Hyeong Bahk, Joun Lee, Christina S Birkel, Matthew L Snedaker, Deyu Liu, Hongmei Zeng, Martin Moskovits, Ali Shakouri, Galen D Stucky.
Abstract
An approach based on a solution-based synthesis that produces a thermally stable Ag/oxide/S₂ Te₃ -Te metal-semiconductor heterostructure is described. With this approach, a figure of merit of zT = 1.0 at 460 K is achieved, a record for a heterostructured material made using wet chemistry. Combining experiments and theory shows that the large increase in the material's Seebeck coefficient results from hot carrier filtering.Entities:
Keywords: atomic layer deposition (ALD); hetero-structure; hot carrier filtering effect; molecular metal chalcogenide; solution processed; thermoelectric
Year: 2014 PMID: 24474071 DOI: 10.1002/adma.201304419
Source DB: PubMed Journal: Adv Mater ISSN: 0935-9648 Impact factor: 30.849