| Literature DB >> 24458809 |
Sebastian Nau1, Stefan Sax, Emil J W List-Kratochvil.
Abstract
The origin of resistive switching in organic devices is studied by photovoltaic methods and impedance spectroscopy. The results show that the most commonly proposed charging/discharging mechanisms can be excluded as working mechanism. There is solid evidence that resistive switching is due to the formation/rupture of filaments. Further, it is shown that this is a universal property of metal/organic/metal thin-film devices.Keywords: defects in organic devices; memristors; organic materials; organic memories; resistive switching
Year: 2014 PMID: 24458809 DOI: 10.1002/adma.201305369
Source DB: PubMed Journal: Adv Mater ISSN: 0935-9648 Impact factor: 30.849