Literature DB >> 24458809

Unravelling the nature of unipolar resistance switching in organic devices by utilizing the photovoltaic effect.

Sebastian Nau1, Stefan Sax, Emil J W List-Kratochvil.   

Abstract

The origin of resistive switching in organic devices is studied by photovoltaic methods and impedance spectroscopy. The results show that the most commonly proposed charging/discharging mechanisms can be excluded as working mechanism. There is solid evidence that resistive switching is due to the formation/rupture of filaments. Further, it is shown that this is a universal property of metal/organic/metal thin-film devices.
© 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Keywords:  defects in organic devices; memristors; organic materials; organic memories; resistive switching

Year:  2014        PMID: 24458809     DOI: 10.1002/adma.201305369

Source DB:  PubMed          Journal:  Adv Mater        ISSN: 0935-9648            Impact factor:   30.849


  1 in total

1.  Origin of multi-level switching and telegraphic noise in organic nanocomposite memory devices.

Authors:  Younggul Song; Hyunhak Jeong; Seungjun Chung; Geun Ho Ahn; Tae-Young Kim; Jingon Jang; Daekyoung Yoo; Heejun Jeong; Ali Javey; Takhee Lee
Journal:  Sci Rep       Date:  2016-09-23       Impact factor: 4.379

  1 in total

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