| Literature DB >> 24458727 |
Chul-Ho Lee1, Theanne Schiros, Elton J G Santos, Bumjung Kim, Kevin G Yager, Seok Ju Kang, Sunwoo Lee, Jaeeun Yu, Kenji Watanabe, Takashi Taniguchi, James Hone, Efthimios Kaxiras, Colin Nuckolls, Philip Kim.
Abstract
Epitaxial van der Waals (vdW) heterostructures of organic and layered materials are demonstrated to create high-performance organic electronic devices. High-quality rubrene films with large single-crystalline domains are grown on h-BN dielectric layers via vdW epitaxy. In addition, high carrier mobility comparable to free-standing single-crystal counterparts is achieved by forming interfacial electrical contacts with graphene electrodes.Entities:
Keywords: hexagonal boron nitride (h-BN); organic semiconductors,organic field-effect transistors; rubrene; van der Waals heterostructures
Year: 2014 PMID: 24458727 DOI: 10.1002/adma.201304973
Source DB: PubMed Journal: Adv Mater ISSN: 0935-9648 Impact factor: 30.849