Literature DB >> 24413341

Numerical simulation of electrically stimulated osteogenesis in dental implants.

J C Vanegas-Acosta1, D A Garzón-Alvarado2, V Lancellotti3.   

Abstract

Cell behavior and tissue formation are influenced by a static electric field (EF). Several protocols for EF exposure are aimed at increasing the rate of tissue recovery and reducing the healing times in wounds. However, the underlying mechanisms of the EF action on cells and tissues are still a matter of research. In this work we introduce a mathematical model for electrically stimulated osteogenesis at the bone-dental implant interface. The model describes the influence of the EF in the most critical biological processes leading to bone formation at the bone-dental implant interface. The numerical solution is able to reproduce the distribution of spatial-temporal patterns describing the influence of EF during blood clotting, osteogenic cell migration, granulation tissue formation, displacements of the fibrillar matrix, and formation of new bone. In addition, the model describes the EF-mediated cell behavior and tissue formation which lead to an increased osteogenesis in both smooth and rough implant surfaces. Since numerical results compare favorably with experimental evidence, the model can be used to predict the outcome of using electrostimulation in other types of wounds and tissues.
Copyright © 2013 Elsevier B.V. All rights reserved.

Keywords:  Electrostimulation; Implant; Modeling; Osteogenesis

Mesh:

Substances:

Year:  2013        PMID: 24413341     DOI: 10.1016/j.bioelechem.2013.12.001

Source DB:  PubMed          Journal:  Bioelectrochemistry        ISSN: 1567-5394            Impact factor:   5.373


  1 in total

1.  Influence of the intensity and loading time of direct current electric field on the directional migration of rat bone marrow mesenchymal stem cells.

Authors:  Xiaoyu Wang; Yuxuan Gao; Haigang Shi; Na Liu; Wei Zhang; Hongbo Li
Journal:  Front Med       Date:  2016-06-20       Impact factor: 4.592

  1 in total

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