In situ and non-volatile bandgap tuning of multilayer graphene oxide in an all-solid-state electric double-layer transistor.

The sp(2) /sp(3) domain fraction of multilayer graphene oxide (GO) is tuned in situ and in a non-volatile manner by using a proton-induced redox reaction at the interface of GO and the yttria-stabilized zirconia proton-conductor. This method opens the door for transparent, ultrathin, flexible, and low cost carbon-nanoionics devices that can control not only electronic transport, but also other properties such as photoluminescence and optics.