Literature DB >> 24338972

Near-equilibrium chemical vapor deposition of high-quality single-crystal graphene directly on various dielectric substrates.

Jianyi Chen1, Yunlong Guo, Lili Jiang, Zhiping Xu, Liping Huang, Yunzhou Xue, Dechao Geng, Bin Wu, Wenping Hu, Gui Yu, Yunqi Liu.   

Abstract

By using near-equilibrium chemical vapor deposition, it is demonstrated that high-quality single-crystal graphene can be grown on dielectric substrates. The maximum size is about 11 μm. The carrier mobility can reach about 5650 cm(2) V(-1) s(-1) , which is comparable to those of some metal-catalyzed graphene crystals, reflecting the good quality of the graphene lattice.
© 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Entities:  

Keywords:  chemical vapor deposition; dielectric substrates; near-equilibrium; single-crystal graphene

Year:  2013        PMID： 24338972     DOI： 10.1002/adma.201304872

Source DB:  PubMed          Journal:  Adv Mater        ISSN： 0935-9648            Impact factor:   30.849


  9 in total

1.  Direct synthesis of graphene on silicon oxide by low temperature plasma enhanced chemical vapor deposition.

Authors:  Roberto Muñoz; Lidia Martínez; Elena López-Elvira; Carmen Munuera; Yves Huttel; Mar García-Hernández
Journal:  Nanoscale       Date:  2018-07-09       Impact factor: 7.790

2.  Low Temperature Metal Free Growth of Graphene on Insulating Substrates by Plasma Assisted Chemical Vapor Deposition.

Authors:  R Muñoz; C Munuera; J I Martínez; J Azpeitia; C Gómez-Aleixandre; M García-Hernández
Journal:  2d Mater       Date:  2016-11-03       Impact factor: 7.103

3.  Silane-catalysed fast growth of large single-crystalline graphene on hexagonal boron nitride.

Authors:  Shujie Tang; Haomin Wang; Hui Shan Wang; Qiujuan Sun; Xiuyun Zhang; Chunxiao Cong; Hong Xie; Xiaoyu Liu; Xiaohao Zhou; Fuqiang Huang; Xiaoshuang Chen; Ting Yu; Feng Ding; Xiaoming Xie; Mianheng Jiang
Journal:  Nat Commun       Date:  2015-03-11       Impact factor: 14.919

4.  Chemical Vapor Deposition of High-Quality Large-Sized MoS2 Crystals on Silicon Dioxide Substrates.

Authors:  Jianyi Chen; Wei Tang; Bingbing Tian; Bo Liu; Xiaoxu Zhao; Yanpeng Liu; Tianhua Ren; Wei Liu; Dechao Geng; Hu Young Jeong; Hyeon Suk Shin; Wu Zhou; Kian Ping Loh
Journal:  Adv Sci (Weinh)       Date:  2016-03-31       Impact factor: 16.806

5.  Growing three-dimensional biomorphic graphene powders using naturally abundant diatomite templates towards high solution processability.

Authors:  Ke Chen; Cong Li; Liurong Shi; Teng Gao; Xiuju Song; Alicja Bachmatiuk; Zhiyu Zou; Bing Deng; Qingqing Ji; Donglin Ma; Hailin Peng; Zuliang Du; Mark Hermann Rümmeli; Yanfeng Zhang; Zhongfan Liu
Journal:  Nat Commun       Date:  2016-11-07       Impact factor: 14.919

Review 6.  Direct CVD Growth of Graphene on Technologically Important Dielectric and Semiconducting Substrates.

Authors:  Afzal Khan; Sk Masiul Islam; Shahzad Ahmed; Rishi R Kumar; Mohammad R Habib; Kun Huang; Ming Hu; Xuegong Yu; Deren Yang
Journal:  Adv Sci (Weinh)       Date:  2018-09-22       Impact factor: 16.806

7.  CVD graphene/Ge interface: morphological and electronic characterization of ripples.

Authors:  Cesar D Mendoza; Neileth S Figueroa; Marcelo E H Maia da Costa; Fernando L Freire
Journal:  Sci Rep       Date:  2019-08-29       Impact factor: 4.379

8.  One-Minute Room-Temperature Transfer-Free Production of Mono- and Few-Layer Polycrystalline Graphene on Various Substrates.

Authors:  Shenglin Jiang; Yike Zeng; Wenli Zhou; Xiangshui Miao; Yan Yu
Journal:  Sci Rep       Date:  2016-01-14       Impact factor: 4.379

Review 9.  Synthesis of high quality two-dimensional materials via chemical vapor deposition.

Authors:  Jingxue Yu; Jie Li; Wenfeng Zhang; Haixin Chang
Journal:  Chem Sci       Date:  2015-08-03       Impact factor: 9.825
  9 in total

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