| Literature DB >> 24336690 |
Luyang Wang1, Younghun Park, Peng Cui, Sora Bak, Hanleem Lee, Sae Mi Lee, Hyoyoung Lee.
Abstract
We introduce a facile method to prepare an n-type reduced graphene oxide field effect transistor at room temperature via a typical Benkeser reduction using lithium and ethylenediamine.Entities:
Year: 2014 PMID: 24336690 DOI: 10.1039/c3cc47224h
Source DB: PubMed Journal: Chem Commun (Camb) ISSN: 1359-7345 Impact factor: 6.222