Anisotropic electro-optic effect on InGaAs quantum dot chain modulators.

We investigated the anisotropic electro-optic (EO) effect on InGaAs quantum dot (QD) chain modulators. The linear EO coefficients were determined as 24.3 pm/V (33.8 pm/V) along the [011] direction and 30.6 pm/V (40.3 pm/V) along the [011¯] direction at 1.55 μm (1.32 μm) operational wavelength. The corresponding half-wave voltages (Vπs) were measured to be 5.35 V (4.35 V) and 4.65 V (3.86 V) at 1.55 μm (1.32 μm) wavelength. This is the first report on the anisotropic EO effect on QD chain structures. These modulators have 3 dB bandwidths larger than 10 GHz.