| Literature DB >> 24310932 |
Liwen Sang1, Meiyong Liao, Qifeng Liang, Masaki Takeguchi, Benjamin Dierre, Bo Shen, Takashi Sekiguchi, Yasuo Koide, Masatomo Sumiya.
Abstract
Multiple stacked InGaN/GaN quantum dots are embedded into an InGaN p-n junction to develop multilevel intermediateband (MIB) solar cells. An IB transition is evidenced from both experiment and theoretical calculations. The MIB solar cell shows a wide photovoltaic response from the UV to the near-IR region. This work opens up an interesting opportunity for high-efficiency IB solar cells in the photovoltaics field.Entities:
Keywords: InGaN; intermediate-band; multilevel; solar cell
Year: 2013 PMID： 24310932 DOI： 10.1002/adma.201304335
Source DB: PubMed Journal: Adv Mater ISSN： 0935-9648 Impact factor: 30.849