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Literature DB >> 24307317

Bandgap tunability in Zn(Sn,Ge)N(2) semiconductor alloys.

Prineha Narang¹, Shiyou Chen, Naomi C Coronel, Sheraz Gul, Junko Yano, Lin-Wang Wang, Nathan S Lewis, Harry A Atwater.

Abstract

ZnSn1-x Gex N2 direct bandgap semiconductor alloys, with a crystal structure and electronic structure similar to InGaN, are earth-abundant alternatives for efficient, high-quality optoelectronic devices and solar-energy conversion. The bandgap is tunable almost monotonically from 2 eV (ZnSnN2 ) to 3.1 eV (ZnGeN2 ) by control of the Sn/Ge ratio.

Keywords: Zn(Sn,Ge)N2 semiconductor alloys; bandgap; miscibility

Year: 2013 PMID： 24307317 DOI： 10.1002/adma.201304473

Source DB: PubMed Journal: Adv Mater ISSN： 0935-9648 Impact factor: 30.849

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Cited

1 in total

1. Solid Solutions of Grimm-Sommerfeld Analogous Nitride Semiconductors II-IV-N₂ (II=Mg, Mn, Zn; IV=Si, Ge): Ammonothermal Synthesis and DFT Calculations.

Authors: Mathias Mallmann; Robin Niklaus; Tobias Rackl; Maximilian Benz; Thanh G Chau; Dirk Johrendt; Ján Minár; Wolfgang Schnick
Journal: Chemistry Date: 2019-11-07 Impact factor: 5.236

1 in total

Bandgap tunability in Zn(Sn,Ge)N(2) semiconductor alloys.

1. Solid Solutions of Grimm-Sommerfeld Analogous Nitride Semiconductors II-IV-N2 (II=Mg, Mn, Zn; IV=Si, Ge): Ammonothermal Synthesis and DFT Calculations.

1. Solid Solutions of Grimm-Sommerfeld Analogous Nitride Semiconductors II-IV-N₂ (II=Mg, Mn, Zn; IV=Si, Ge): Ammonothermal Synthesis and DFT Calculations.